2D semiconductor structures as a basis for new high-tech devices (Review)

Abstract

In this article, we present a short overview of the Ukrainian contribution into physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics together with some new results in this field. The possibility of creating "low-threshold" 2D lasers in Si 3 N 4-GaAs and Al x Ga 1-x As-GaAs layered heterostructures, in which two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in details. It has been demonstrated that under the conditions of simultaneous coexistence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS 2 and WS 2 types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS 2 monolayer. It confirms the possibility to fabricate Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable to generate frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications.

Електронно-Дірковий Упорядкований Конденсат Як Пер-Спективне Лазерне 2D Середовище Для Кімнатних Температур

“…Those advantages, together with the simplicity of the resonator macroditch formation technology, make promising the development of 2D sources of induced radiation as more technologically attractive in comparison with 2D systems based on microresonant ditches. This is another demonstration of the prospects of using 2D semiconductor systems as a basis for creating a new generation of optoelectronic devices [25].…”

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“…Our strategy for the next decade included theoretical consideration of new effects in low-dimensional semiconductor structures [7][8][9][10], establishment of new principles and approaches to create and study functionality of lasers and LEDS [11][12][13][14][15][16][17][18], clarification of some peculiarities in new hetero-and hybrid structures [19][20][21], application of sensor and photovoltaic cells [22][23][24][25][26][27], use of semiconductor, optic and quantum electronic devices in ecology, communications, renewable energetics and health care [28][29][30][31][32][33][34][35][36][37].…”