Here we report the experimental analysis on the low-n (mostly n  =  1, sometimes n  =  2) magnetic coherent mode (MCM) at a characteristic frequency 20–, which has been frequently observed in various H-mode discharges on EAST. This mode can be easily identified in the magnetic fluctuations measured by the fast Mirnov coils mounted on the vacuum vessel wall, but is detected by the local measurements of edge electrostatic fluctuations only when the mode is sufficiently strong. The apperance of the MCM is summarized covering broad ranges of discharge parameters, in particular, the different heating schemes including pure neutral beams injected in either co- or counter-current direction as well as pure ratio-frequency waves. This may rule out the possibility of fast particle driven modes. Radial distribution and poloidal propagation of the MCM are investigated using the Doppler backscattering system and Langmuir probes inserted at the outer midplane, respectively. Temporal evolution of MCM amplitude during large ELM crashes is evaluated in detail, may suggesting the mode is closely correlated with pedestal buildup. Dedicated experiments reveal the possible correlations of MCM’s frequencies with edge line-averaged density and edge safety factor q95. We also present the observation of multi MCMs at relatively high q95, which are speculated locating at different rational surfaces in the pedestal via analyzing their mode structures and nonlinear interactions. Finally, effect of the MCM on edge particle transport is explored via surveying the correlation between the intermittent events of the mode and the particle fluxes deposited on the divertor target plates, utilizing the conditional analysis method. Corresponding results suggest that the MCM seems to primarily result in a notable poloidal redistribution of the divertor particle flux, rather than a considerable net increase of the total flux.

Recently, layered ultrathin 2D semiconductors, such as MoS and WSe are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge-trap materials. Here, a charge-trap memory device based on a hybrid 0D CdSe QD-2D WSe structure is demonstrated. Specifically, ultrathin WSe is employed as the channel of the memory, and the QDs serve as the charge-trap layer. This device shows a large memory window exceeding 18 V, a high erase/program current ratio (reaching up to 10 ), four-level data storage ability, stable retention property, and high endurance of more than 400 cycles. Moreover, comparative experiments are carried out to prove that the charges are trapped by the QDs embedded in the Al O . The combination of 2D semiconductors with 0D QDs opens up a novelty field of charge-trap memory devices.

The freak oscillation in one-dimensional dusty plasma is studied numerically by particle-in-cell method. Using a perturbation method, the basic set of fluid equations is reduced to a nonlinear Schrödinger equation (NLSE). The rational solution of the NLSE is presented, which is proposed as an effective tool for studying the rogue waves in dusty plasma. Additionally, the application scope of the analytical solution of the rogue wave described by the NLSE is given.

We propose a method to improve the secret key rates of four-state continuous-variable quantum key distribution by using an optical preamplifier. The modified protocol allows the distribution of higher secret key rates over long distances. Included in this paper is a detailed investigation of the effects of inserting an optical parametric amplifier into the output of the quantum channel in the four-state protocol, which will be instructive and meaningful about the usage of amplifiers in order to achieve the optimal performance of the protocol in a specific scenario.

Benefiting from the technique of vertically stacking 2D layered materials (2DLMs), an advanced novel device architecture based on a top‐gated MoS2/WSe2 van der Waals (vdWs) heterostructure is designed. By adopting a self‐aligned metal screening layer (Pd) to the WSe2 channel, a fixed p‐doped state of the WSe2 as well as an independent doping control of the MoS2 channel can be achieved, thus guaranteeing an effective energy‐band offset modulation and large through current. In such a device, under specific top‐gate voltages, a sharp PN junction forms at the edge of the Pd layer and can be effectively manipulated. By varying top‐gate voltages, the device can be operated under both quasi‐Esaki diode and unipolar‐Zener diode modes with tunable current modulations. A maximum gate‐coupling efficiency as high as ≈90% and a subthreshold swing smaller than 60 mV dec−1 can be achieved under the band‐to‐band tunneling regime. The superiority of the proposed device architecture is also confirmed by comparison with a traditional heterostructure device. This work demonstrates the feasibility of a new device structure based on vdWs heterostructures and its potential in future low‐power electronic and optoelectronic device applications.

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