Ionogels offer great potential for diverse electric applications. However, it remains challenging to fabricate high-performance ionogels with both good mechanical strength and high conductivity. Here, a new kind of transparent ionogel with both good mechanical strength and high conductivity is designed via locking a kind of free ionic liquid (IL), i.e., 1-ethyl-3-methylimidazolium dicyanamide ([EMIm][DCA]), into charged poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPS)-based double networks. On the one hand, the charged PAMPS double network provides good mechanical strength and excellent recovery property. On the other hand, the free [EMIm][DCA] locked in the charged double network through electrostatic interaction offers ionic conductivity as high as ≈1.7-2.4 S m at 25 °C. It is demonstrated that the designed ionogel can be successfully used for a flexible skin sensor even under harsh conditions. Considering the rationally designed chemical structures of ILs and the diversity of charged polymer networks, it is envisioned that this strategy can be extended to a broad range of polymer systems. Moreover, functional components such as conducting polymers, 0D nanoparticles, 1D nanowires, and 2D nanosheets can be introduced into the polymer systems to fabricate diverse novel ionogels with unique functions. It is believed that this design principle will provide a new opportunity to construct next-generation multifunctional ionogels.
Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay the foundation for the next-generation of high-speed non-volatile memory.
With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In2Se3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40 ns, improved endurance through the internal electric field, flexible adjustment of neural plasticity, ultra-low energy consumption of 234/40 fJ per event for excitation/inhibition, and thermally modulated 94.74% high-precision iris recognition classification simulation. This prototypical demonstration lays the foundation for an integrated memory computing system with high density and energy efficiency.
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