Multifunctional black phosphorus/MoS₂ van der Waals heterojunction

Abstract

<jats:title>Abstract</jats:title> <jats:p>The fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS<jats:sub>2</jats:sub> heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS<jats:sub>2</jats:sub> heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS<jats:sub>2</jats:sub> heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS<jats:sub>2</jats:sub> heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS<jats:sub>2</jats:sub> heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.</jats:p>

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector

“…Because of the absorption of both BP and Bi 2 O 2 Se to infrared light, R reaches ∼ 9.5 A/W, ∼ 4.3 A/W and ∼ 2.3 A/W at 850 nm, 1330 nm and 1550 nm, respectively. This is at a superior level among the BP or Bi 2 O 2 Se based photovoltaic photodetectors, as summarized in Figure4(f)[27][28][29][30][31][32][33][34][35][36][37][38]. Whilst D* is calculated to be ∼ 5.3 × 10 9 Jones, ∼ 2.4 × 10 9 Jones and ∼ 1.…”

Tunable Intermediate-Logic Ternary Circuits based on MoSe2-WSe2 Heterojunction

“…It is worth noting that ID increases again, when further negative bias is applied (VG < −47 V). This is because the MoSe2 contributes to electron carrier accumulation due to its ambipolar charge transport properties (Figure 1d It is emphasized that the maximum NDT and voltage range values obtained in the MoSe2-WSe2 vdW-H-TR are larger than in previously reported TMDs-based heterojunction transistors (Table S2) Unlike previously reported ternary inverters, 23,26,38,39 the floating-gate transistor is used as a pull-down transistor in this work. The MoS2 transistor without the floating-gate layer was showed no hysteresis in the transfer characteristics curve ( Figure S11).…”

Bandgap Modulation in BP Field Effect Transistor and Its Applications

“…[ 126 ] Next, we will introduce the bandgap and performance changes of BP heterojunction vertical FET and lateral FET. [ 7,130–138 ]…”

“…and b) vertical MoS 2 /BP FETs; Reproduced with permission. [ 134 ] Copyright 2020, De Gruyter, Berlin/Boston.…”

“…Reproduced with permission. [ 134 ] Copyright 2020, De Gruyter, Berlin/Boston. Thickness; Adapted with permission.…”