Perovskite Resonant Tunneling FET with Sequential Negative Differential Resistance Peaks

Abstract

A vertical resonant tunneling (RT) field effect transistor (VRTFET), fabricated using perovskite (CH3NH3PbI3), has been analyzed for sequential sharp negative differential resistance (NDR) peaks useful in multiple-valued logic devices. NDR peaks are attributed to the sub-bands formation within the parabolic shaped band gap, present at the channel and drain/source interface due to Schottky barriers. Ambipolar CH3NH3PbI3 imparts both p and n mode characteristics with RT NDR peaks. An unprecedentedly high (100 to 1000 V–1) curvature coefficient (ϒ) has been found with two NDR peaks at a short interval, whose positions shift left, with gate bias. Due to the ionic nature of CH3NH3PbI3, hysteresis has also been observed in the transfer characteristics. This structure can overcome the limit of 60 mV/decade as well as a curvature limit of 40 V–1, important parameters for analog and digital applications. So, these devices promise cheaper and easy fabrication at commercial scale operation at ultralow voltage and low power.

Crystal Size Effect on Carrier Transport of Microscale Perovskite Junctions via Soft Contact

“…Negative differential resistance (NDR), characterized by a decrease in current with increasing voltage, has attracted tremendous attention and has been regarded as an important element for nanoelectronic applications in low power memory, high frequency oscillators, and logic circuit applications. − Typically, NDR can be achieved via resonant tunnelling heterostructures with a system composed of double potential barriers and one potential well. , NDR behavior has also been observed in sandwiched membranes, which was normally attributed to charge-carrier trapping/detrapping by defects. , Here, we observed an intrinsic and pronounced room-temperature NDR effect with relatively small-size (∼30 μm) perovskite MP junctions, whereas the NDR behavior disappeared for large (∼80 μm) perovskite MP junctions, indicating a mechanism different from that in the previous literature. A model based on ion migration and enhanced carrier recombination in perovskites was developed to illustrate the size-dependent NDR behavior of the perovskites.…”

“…15−18 Typically, NDR can be achieved via resonant tunnelling heterostructures with a system composed of double potential barriers and one potential well. 19,20 NDR behavior has also been observed in sandwiched membranes, which was normally attributed to charge-carrier trapping/detrapping by defects. 21,22 Here, we observed an intrinsic and pronounced roomtemperature NDR effect with relatively small-size (∼30 μm) perovskite MP junctions, whereas the NDR behavior disappeared for large (∼80 μm) perovskite MP junctions, indicating a mechanism different from that in the previous literature.…”

Organic–inorganic hybrid perovskite materials and their application in transistors

“…Agrawal et al fabricated vertical structured vertical resonant tunnelling field effect transistor using MAPbI 3 channel material, where the sharp negative differential resistance (NDR) peaks were observed in both the p and n mode owing to the ambipolar characteristic of MAPbI 3 . 125 Subsequently, they reported FETs with 120 nm length channel. m h and m e were calculated to be 1.5 and 0.97 cm 2 V À1 s À1 , respectively.…”

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

“…With the emergence of novel materials, RT and resulting multipeak I – V curves have been reported in various structures based on graphene, TMDCs, organic materials, and perovskites. [ 121–129 ] Most of these works underline the application potential of the demonstrated RT devices in the MVL field, however, since they mainly represent early results, MVL applications are yet to be demonstrated. Several representative works will be briefly introduced in this section.…”