Eutectic gallium–indium (EGaIn), a liquid metal with a melting point close to or below room temperature, has attracted extensive attention in recent years due to its excellent properties such as fluidity, high conductivity, thermal conductivity, stretchability, self‐healing capability, biocompatibility, and recyclability. These features of EGaIn can be adjusted by changing the experimental condition, and various composite materials with extended properties can be further obtained by mixing EGaIn with other materials. In this review, not only the are unique properties of EGaIn introduced, but also the working principles for the EGaIn‐based devices are illustrated and the developments of EGaIn‐related techniques are summarized. The applications of EGaIn in various fields, such as flexible electronics (sensors, antennas, electronic circuits), molecular electronics (molecular memory, opto‐electronic switches, or reconfigurable junctions), energy catalysis (heat management, motors, generators, batteries), biomedical science (drug delivery, tumor therapy, bioimaging and neural interfaces) are reviewed. Finally, a critical discussion of the main challenges for the development of EGaIn‐based techniques are discussed, and the potential applications in new fields are prospected.

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To reduce the size of optoelectronic devices, it is essential to understand the crystal size effect on the carrier transport through microscale materials. Here, we show a soft contact method to probe the properties of irregularly shaped microscale perovskite crystals by employing a movable liquid metal electrode to form a self-adaptative deformable electrode−perovskite−electrode junction. Accordingly, we demonstrate that (1) the photocurrents of perovskite quantum dot films and microplatelets show profound differences regarding both the on/off ratio and the response time upon light illumination; and (2) small-size perovskite (<50 μm) junctions may show negative differential resistance (NDR) behavior, whereas the NDR phenomenon is absent in large-size perovskite junctions within the same bias regime. Our studies provide a method for studying arbitrary-shaped crystals without mechanical damage, assisting the understanding of the photogenerated carriers transport through microscale crystals.

We report an efficient continuous wave (CW) laser emission at 559 nm by sum-frequency mixing of the fundamental and first-Stokes fields generated within an Nd:YVO4 self-Raman laser. Intracavity sum-frequency mixing with LiB3O5 (LBO) nonlinear crystal yielded 890 mW of visible yellow-green emission, corresponding to an optical conversion efficiency of 4.9% with respect to the incident pump power; the output power stability over 4 h is better than 5.7%. The laser beam quality M2 factors are 3.65 and 4.13 in both horizontal and vertical dimensions respectively.

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We present a laser architecture to obtain continuouswave (CW) light sources at the 589 nm sodium D2 line. A 808 nm diode-pumped a Nd:YLiF 4 (Nd:YLF) crystal emitting at 1053 nm. A part of the pump power was then absorbed by the Nd:YLF crystal. The remaining was used to pump a Nd:YAG crystal emitting at 1338 nm. Intracavity sum-frequency mixing at 1053 and 1338 nm was then realized in a LiB 3 O 5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 235 mW at 589 nm with a pump laser diode emitting 17.8 W at 808 nm. Stability of the yellow-orange output power around the 235 mW operation point

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