Organic–inorganic hybrid perovskite materials and their application in transistors

Abstract

The emerging hybrid organic-inorganic perovskites (HOIPs) have attracted tremendous attention due to their versatile and tunable structures and properties. By employing organic cations, HOIPs can integrate the advantages of both...

Successive high-temperature phase transitions triggered dielectric switching in a one-dimensional hybrid perovskite with blue emission

“…Organic–inorganic hybrid perovskite materials have emerged as a captivating research focus due to their intriguing structural properties and versatile applications in various technological domains, including photovoltaics, light-emitting diodes, sensors, and photodetectors. 1–7 The unique crystal structure of hybrid perovskites, characterized by corner-sharing octahedra forming one-dimensional (1D) inorganic chains surrounded by organic cations, confers upon them exceptional optoelectronic properties, such as high charge carrier mobility, long carrier diffusion lengths, and tunable bandgaps. 8–11 These attributes render hybrid perovskites highly promising for the development of next-generation electronic and photonic devices.…”

Crystal structure, semiconducting and photoluminescence (PL) properties of hybrid tin perovskite-like materials: [Cl–(CH2)2–NH3]2SnCl6 and [Cl–(CH2)2–NH3]2SnBr5.65Cl0.35

“…Research on hybrid halide perovskites or perovskite-like crystal structures has become one of the most crucial and promising topics of study due to their amazing ability to incorporate properties of organic and inorganic components within a single compound. 1–4 The structure of these materials consists of inorganic BX 6 octahedra (B is a metal ion and “X” is a halogen atom) to form 3D structures, 2D systems, 1D chains or 0D clusters, 5–7 which are separated by layers of organic cations. These structures nearly resemble ideal perovskites, which refer to a class of inorganic crystals with the chemical formula ABX 3 .…”

Remarkable Enhancement of Detectivity and Stability in Flexible n–i–p-Type Perovskite Photodetectors by Concurrent Use of Various Two-Dimensional Materials: Doped Graphene, Graphene Quantum Dots, WS2, and h-BN

“…6−11 The advantages of organic− inorganic hybrid perovskite semiconductors, such as large absorption coefficient, fast carrier generation, high carrier mobility, and simple solution processability, are very useful for the design and fabrication of the PDs on flexible substrates. 12 The photoresponse of perovskite PDs employing indium tin oxide (ITO) as a transparent conductive electrode (TCE) is known to be comparable to that of commercial Si PDs, 13,14 but ITO TCEs are vulnerable to environmental factors such as moisture and oxygen and are brittle, making it impossible to be used for flexible and stretchable applications. 15,16 As the demand for bendable and wearable PDs grows rapidly, it becomes more important to find flexible TCEs.…”

“…Convergence of perovskite engineering and flexible electronics may open new routes for development of lightweight, bendable, and wearable devices, thereby revolutionizing sensing and imaging technologies. − Particularly, flexible perovskite photodetectors (PDs) stand out as a promising candidate for one of the key components in next-generation optoelectronic systems. − The advantages of organic–inorganic hybrid perovskite semiconductors, such as large absorption coefficient, fast carrier generation, high carrier mobility, and simple solution processability, are very useful for the design and fabrication of the PDs on flexible substrates . The photoresponse of perovskite PDs employing indium tin oxide (ITO) as a transparent conductive electrode (TCE) is known to be comparable to that of commercial Si PDs, , but ITO TCEs are vulnerable to environmental factors such as moisture and oxygen and are brittle, making it impossible to be used for flexible and stretchable applications. , As the demand for bendable and wearable PDs grows rapidly, it becomes more important to find flexible TCEs. Chemical vapor deposition (CVD) graphene (GR) has been widely adopted as a flexible TCE in optoelectronic applications because it can be grown to cover the entire substrate without pinholes while exhibiting perfect transmittance in the ultraviolet–infrared region, high mobility, and remarkable elasticity/flexibility. − However, pristine GR is not suitable for high-performance optoelectronic devices because of the low conductivity despite the high transmittance. − A low sheet resistance of GR with its high transmittance being maintained can be obtained by doping with impurities (dopants) such as triethylene tetramine (TETA). , …”