Performance Enhancement of GAA Multi-Gate Nanowire with Asymmetric Hetero-Dielectric Oxide

Yadav, Ritu; Ahuja, Kiran; Rathee, Davinder

doi:10.1007/s12633-021-00964-1

Cited by 9 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ritu Yadav et al 17 proposed an asymmetric GAA NW with hetero-dielectric gate oxide FET for low power applications. HfO 2 /TiO 2 high-k gate dielectric is used at source side and SiO 2 is used at the drain side, the ON-current and various DC and Analog parameters are enhanced by hetero dielectric structure.…”

mentioning

confidence: 99%

Circuit Level Analysis of a Dual Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET at Nanoscale Regime

Mudidhe¹,

Nistala²

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Gate-all around (GAA) device is one of the cutting-edge technologies and the advantages of these devices can be improved by incorporating the dual material (DM) and graded channel (GC) techniques. This manuscript investigates for the first time, the performance analysis of DMGC CGAA FET and circuit applications such as inverter, NAND, NOR, ring oscillator and 6T SRAM. It has been found that the Ioff, SS, DIBL, Ion/Ioff ratio are enhanced by an amount of 96.93%, 19.49%, 51.26%, 96.98% respectively for DMGC CGAA FET when compared to SMGC CGAA FET. Single-k (SiO2) and dual-k (SiO2+HfO2) techniques are also utilized here to analyse the device performance and dual-k recorded better performance in comparison with single-k owing to reduced off-state currents. It is noticed that delay has been reduced greatly for Inverter, NAND, and NOR by an amount of 51.93%, 11.25%, and 10.07% respectively for dual-k when compared to single-k DMGC CGAA FET. The frequency of oscillations for Ring Oscillator is improved by 69.7% with dual-k than single-k. Further, the obtained results of SRAM are compared with the existing literatures and noticed that the proposed DMGC CGAA FET outperforms the other works making the device a potential candidature for high performance applications.

show abstract

mentioning

confidence: 99%