Parallel connection of super-junction MOSFETs in a PFC application

Chimento, F.; Raciti, A.; Cannone, Alessandro; Musumeci, S.; Gaito, A.

doi:10.1109/ecce.2009.5316419

Cited by 17 publications

(5 citation statements)

References 11 publications

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“…If current unbalance exists and the current in the two windings are unequal, there will be a net flux change, and current in the secondary will generate output voltage V out whose polarity indicates the polarity of unbalance. Compared to the transformer in [8], the proposed DCT has negligible impact on the system efficiency and components' stresses because the primary winding has negligible resistance, and the toroidal core and single turn primary windings are adopted to minimize leakage inductance. Moreover, since only the current difference contributes to the magnetic flux, the proposed DCT can have a low saturation current, and therefore small size of core.…”

Section: A Current Unbalance Sensingmentioning

confidence: 99%

“…These techniques can be hard to implement when the number of paralleled devices is large, and the improvement may be limited if the component parameter (V th or g m ) mismatch dominates. A 1:1 turn-ratio transformer is added to the drains of the parallel devices to force a balanced current in [8]. However, losses in this transformer decreases the system overall efficiency, and an over-voltage snubber has to be added to suppress voltage spikes caused by the transformer.…”

Section: Introductionmentioning

confidence: 99%

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Active current balancing for parallel-connected silicon carbide MOSFETs

Xue

Wang

et al. 2013

2013 IEEE Energy Conversion Congress and Exposition

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In high power applications of silicon carbide (SiC) MOSFETs where parallelism is employed, current unbalance can occur and affect the performance and reliability of the power devices. In this paper, factors which cause current unbalance in these devices are analyzed. Among them, the threshold voltage mismatch is identified as a major factor for dynamic current unbalance. The threshold distribution of SiC MOSFETs is investigated, and its effect on current balance is studied in experiments. Based on these analyses, an active current balancing scheme is proposed. It is able to sense the unbalanced current and eliminate it by actively controlling the gate drive signal to each device. The features of fine time resolution and low complexity make this scheme attractive to a wide variety of wide-band-gap device applications. Experimental and simulation results verify the feasibility and effectiveness of the proposed scheme.

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Section: A Current Unbalance Sensingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Active current balancing for parallel-connected silicon carbide MOSFETs

Xue

Wang

et al. 2013

2013 IEEE Energy Conversion Congress and Exposition

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“…Gallium nitride-based HEMT devices feature, like silicon power MOSFETs, a positive coefficient temperature suitable for parallel connection [42,43] to increase the current density in the converter arrangement. In the experimental board, the thermal response in steady state conditions occurs without a heatsink exploiting the PCB extension contact with the GaN package solution.…”

Section: Thermal Behaviormentioning

confidence: 99%

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

et al. 2021

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The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

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“…The AFE, or synchronous rectifier, is connected via a filter to the utility grid where it performs AC/DC conversion and PFC [23,24]. Figure 3 shows the circuit test-bench emulator implementation using the Simulink Simscape Electrical Toolbox, a typical AFE control strategy based on the voltage oriented control algorithm.…”

Section: Active Front-end Rectifiermentioning

confidence: 99%

A Tool for Evaluating the Performance of SiC-Based Bidirectional Battery Chargers for Automotive Applications

et al. 2020

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In this paper, a procedure to simulate an electronic power converter for control design and optimization purposes is proposed. For the addressed application, the converter uses SiC-MOSFET technology in bidirectional battery chargers composed of two power stages. The first stage consists of a single-phase AC/DC power factor correction synchronous rectifier. The following stage is a DC/DC dual active bridge. The converter has been modulated using a phase-shift technique which is able to manage bidirectional power flows. The development of a model-based simulation approach is essential to simplify the different design phases. Moreover, it is also important for the final validation of the control algorithm. A suitable tool consisting of a system-level simulation environment has been adopted. The tool is based on a block diagram design method accomplished using the Simulink toolbox in MATLAB™.

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Parallel connection of super-junction MOSFETs in a PFC application

Cited by 17 publications

References 11 publications

Active current balancing for parallel-connected silicon carbide MOSFETs

Active current balancing for parallel-connected silicon carbide MOSFETs

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

A Tool for Evaluating the Performance of SiC-Based Bidirectional Battery Chargers for Automotive Applications

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