Signal and image processing applications require a lot of computing resources. For low-volume applications like in professional electronics applications, FPGA are used in combination with DSP and GPP in order to reach the performances required by the product roadmaps. Nevertheless, FPGA designs are static, which raises a flexibility issue with new complex or software defined applications like software-defined radio (SDR). In this scope, dynamic partial reconfiguration (DPR) is used to bring a virtualization layer upon the static hardware of FPGA. During the last decade, DPR has been widely studied in academia. Nevertheless, there are very few real applications using it, and therefore, there is a lack of feedback providing relevant issues to address in order to improve its applicability. This paper evaluates the interest and limitations when using DPR in professional electronics applications and provides guidelines to improve its applicability. It makes a fair evaluation based on experiments made on a set of signal and image processing applications. It identifies the missing elements of the design flow to use DPR in professional electronics applications. Finally, it introduces a fast reconfiguration manager providing an 84-time improvement compared to the vendor solution.
The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.
High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.
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