Active current balancing for parallel-connected silicon carbide MOSFETs

Xue, Yang; Lu, Junjie; Wang, Zhiqiang; Tolbert, Leon M.; Blalock, Benjamin J.; Wang, Fred

doi:10.1109/ecce.2013.6646891

Cited by 86 publications

(55 citation statements)

References 10 publications

(10 reference statements)

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“…Some other active control strategies have been published in [7], [10], and [11]. An active voltage control technique using dV ce /dt in series-connected IGBTs is proposed in [7].…”

Section: Introductionmentioning

confidence: 99%

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Lü

Zhao

et al. 2015

IEEE Trans. Power Electron.

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Transient voltage unbalance is the major problem that limits the application of series-connected IGBTs in highvoltage and high-power converters. Asynchronous gate delay causes series-connected IGBTs not to turn-on and turn-off at the same time resulting in severely unbalanced voltage sharing. An active voltage balancing control technique is proposed in this paper to solve the asynchronous gate delay problem. By sampling the feedback signal caused by unbalanced voltage sharing, the microcontroller generates a time delay for the gate driver to compensate the asynchronous gate delay. The most vital part of active voltage balancing control, the status feedback circuit, is also discussed in detail in this paper. The function of the status feedback circuit and the effect of active voltage balancing control are verified in a two series-connected HV-IGBTs platform in rated operation (5 kV bus voltage and 600 A load current).

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“…Some other active control strategies have been published in [7], [10], and [11]. An active voltage control technique using dV ce /dt in series-connected IGBTs is proposed in [7].…”

Section: Introductionmentioning

confidence: 99%

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Lü

Zhao

et al. 2015

IEEE Trans. Power Electron.

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“…However, the asymmetric distribution of parasitic inductances in the paralleled devices can cause uneven current sharing during turn-on and turnoff processes, which, in turn, causes uneven switchingloss distribution. In order to balance the current among the paralleled devices, special efforts have to be put on either the layout of circuit or the driver designs (both hardware and software) [3] [4]. This could increase the complexity and cost of the system.…”

Section: Instructionmentioning

confidence: 99%

“…6 shows the control scheme for the multiphase drive. Basically vector control is implemented according to (4) and (5). In addition, one phase open circuit fault is considered in the simulation.…”

Section: System Modelingmentioning

confidence: 99%

Evaluation of a multiphase drive system in EV and HEV applications

Jin

Norrga

Zhang

et al. 2015

2015 IEEE International Electric Machines &Amp; Drives Conference (IEMDC)

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Multiphase machine drive systems have been applied in many electric propulsion fields such as aerospace and electric vehicle applications. With the development of SiC semiconductors, its superior characteristic makes compact multiphase converters possible. Moreover, by using a single chip in each switch, problems caused by an uneven current split between paralleled devices can be avoided. This paper presents a performance evaluation for a 50 kW multiphase EV/HEV drive system with 1.2 kV SiC MOSFETs. Power loss calculation, cost comparison and system simulation are provided to illustrate the feasibility of the proposed concept.

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“…The study of device and circuit mismatch of paralleled SiC MOSFETs has been reported as well [8]- [9]. However, these studies on the device parallel operation do not apply directly to the cascode GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

Paralleled Operation of High-Voltage Cascode GaN HEMTs

Zhang

Wen

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Paralleling devices is an effective way to achieve higher power application while still having the convenience of using discrete devices. However, the mechanisms of potential failures and the circuit design considerations has not been thoroughly studied yet, when paralleling Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) in cascode configuration. This paper presents a comprehensive study on paralleled high voltage cascode GaN HEMTs, evaluating both circuit design and device characteristic. The mechanisms of current oscillation, which occurred during the cascode GaN HEMTs parallel operation, are analyzed in detail. The Q3D tool and SPICE-based simulation model jointly quantify the sensitivity of the circuit parasitic parameters and the cascode GaN HEMTs mismatches during the paralleled operation. General design guidelines are provided in the paper as well. A group of experimental results ultimately validate the analysis toward parallel operation.

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Active current balancing for parallel-connected silicon carbide MOSFETs

Cited by 86 publications

References 10 publications

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Evaluation of a multiphase drive system in EV and HEV applications

Paralleled Operation of High-Voltage Cascode GaN HEMTs

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