Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments

Abstract

Resistive-switching (RS) memories with good performance and flexibility are demonstrated in p-type amorphous CuAlOx. The nature of conducting filaments (CFs) is studied via the dependence of RS behaviors on the oxygen concentration of CuAlOx. It is observed that with increasing oxygen concentration, (1) both resistance-states and switching-voltages reduce, showing an opposite trend to popular n-type oxide devices; and (2) a transition from non-degenerate to degenerate states occurs in CFs. These observations indicate that the CFs are composed of Cu-vacancy shallow acceptors. The oxygen-concentration dependence of CFs' resistance results from the change of Cu-vacancy content, rather than CFs' size or number.

Nanoscale Cross‐Point Resistive Switching Memory Comprising p‐Type SnO Bilayers

“…This is probably because the number of available p‐type oxides is less and the resistive memory mechanism in p‐type oxides has not yet been clearly revealed. However, few p‐type oxide materials such as NiO x , CuO x , Co 2 O 3 , CuAlO x have been reported so far for resistive switching applications. We have recently reported the resistive switching memory performance in another p‐type oxide, SnO .…”

Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices

“…However, few reports on CuAlO x RRAMs are found. Zhang et al [11] demonstrated high-performance, flexible RRAM prototype devices using amorphous p-type CuAlO x with different oxygen concentrations as the switching layer. For Cu:AlO x /TaO x /TiN memory devices, memory characteristics and switching mechanism were investigated by Roy et al [12].…”

Memristive Characteristics of the Single-Layer P-Type CuAlO2 and N-Type ZnO Memristors

“…It is well known that the p-type and n-type semiconductor materials have the opposite oxygen concentration dependence. Based on the redox, some opposing resistive switching behaviors usually are observed in p-type and n-type oxides, such as the bias polarity dependence and the forming location of the conductive filaments [ 10 , 11 , 12 ]. This may be attributed to the different conductive nature for p-type semiconductor (cation vacancy) and n-type semiconductor (oxygen vacancy) [ 13 , 14 ].…”