Nanoscale Cross‐Point Resistive Switching Memory Comprising p‐Type SnO Bilayers

Hota, M. K.; Hedhili, Mohamed N.; Wang, Qingxiao; Melnikov, V.A.; Mohammed, Omar F.; Alshareef, Husam N.

doi:10.1002/aelm.201400035

Cited by 29 publications

(18 citation statements)

References 38 publications

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“…Two common types are resistive‐switching (RS) memory and ferroelectric field‐effect memory. The first type of memory has been commonly reported using p‐type oxides . The device works by changing the state of the material from a low‐resistance state to a high‐resistance state, using a large writing (forming) voltage.…”

Section: Memory Devices Using P‐type Oxidesmentioning

confidence: 99%

“…In 2015, the same team reported another resistive‐switching device based on a bilayer p‐type SnO thin film in a nanoscale cross point (300 nm × 300 nm) device configuration ( Figure ). By using a SnO (oxygen rich)/SnO (oxygen deficient) bilayer film in between the Au/Ti and Al electrodes, an improved memory performance was observed compared with the single‐layer SnO.…”

Section: Memory Devices Using P‐type Oxidesmentioning

confidence: 99%

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Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Memory Devices Using P‐type Oxidesmentioning

confidence: 99%

Section: Memory Devices Using P‐type Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…This type of endurance performance suggests that different amount of "residual or tiny filaments" may exist in the HRS state during dc switching cycles. 32 Indeed, an average switching ratio of $60 times (sufficient to separate the ON/OFF states) is maintained during the whole switching operation (note that a minimum resistance ratio of HRS/LRS > 10 is required for highly efficient memory cell 33 ). In addition, the retention characteristics were also studied and indicated a stable memory performance (see the supplementary material 49 ).…”

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Electroforming free resistive switching memory in two-dimensional VOx nanosheets

Hota

Nagaraju

Hedhili

et al. 2015

Applied Physics Letters

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We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.

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“…[1][2][3][4][5] The corresponding devices can be reversibly addressed by an electrical voltage/pulse between two different resistance states, i.e. a high resistance state (HRS) and a low resistance state (LRS), for the information storage purpose.…”

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Polarity Reversal in the Bipolar Switching of Anodic TiO₂Film

Yin

Tian

Tan

et al. 2015

J. Electrochem. Soc.

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TiO 2 thin films with a thickness of ∼100 nm were prepared on Ti foils by the electrochemical anodization of Ti, and the resistive switching behaviors of Pt/TiO 2 /Ti stacks were investigated. Bipolar switching with opposite polarities (namely "eightwise" and "counter-eightwise") was discovered in the same stack, different from the usual coexistence of unipolar and bipolar switching in TiO 2 films. The intermediate transition process was captured to understand the switching mechanism of the anodic TiO 2 film. An electron/ion co-dominating effect was proposed to explain the anomalous phenomenon.Resistive random access memory (RRAM) based on the resistive switching (RS) effect has a potential to replace the current chargebased flash memory, due to its high density, excellent scalability, low power consumption and CMOS compatibility. 1-5 The corresponding devices can be reversibly addressed by an electrical voltage/pulse between two different resistance states, i.e. a high resistance state (HRS) and a low resistance state (LRS), for the information storage purpose. 6 Most of the current works mainly focus on the understanding of switching mechanism and the improvement of device properties. 7-17 Several abnormal RS behaviors have been discovered in many switching materials by either controlling electroforming mode or varying film thickness. 18-23 A detail investigation to these phenomena significantly contributes to a deeper understanding of the RS mechanism and property enhancement.TiO 2 , an active RS material, has been extensively investigated; 3,24-31 both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors have been observed in TiO 2 films and single crystals. 26,27 Different types of BRS have been configured from the URS reset status in the Pt/TiO 2 /Pt stack. 28 Various ionic or electronic mechanisms have been proposed to explain the resistive switching behavior. 32 Yang et al. demonstrated that the resistive switching involves the modification of the Schottky barrier at the Pt/TiO 2 interface due to the drift of oxygen vacancies under an external electrical field. 3 In situ transmission electron microscopy (TEM) observations otherwise suggest that switching occurs by the formation and disruption of Ti n O 2n-1 (or so-called Magnéli phase) filaments. 31 Kim et al. reported a trap-mediated electronic type switching behavior in the Pt/TiO 2 /Pt stack. 27 Two switching modes sharing an intermediate state in Pt/TiO 2 /Pt stack were also obtained, which were ascribed to different switching layers adjacent to top Pt/TiO 2 interfaces and TiO 2 /Pt bottom interfaces. 21 In most of previous works, TiO 2 thin films were prepared by some sophisticated techniques, e.g. pulsed laser deposition or magnetron sputtering, in which heavy investments in equipment are prerequisite. However, chemical methods, such as anodization and spin coating, provide an inexpensive yet effective alternative to prepare resistive switching materials with high quality. 33-36 Stable RS performance in anodic TiO 2 fil...

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Nanoscale Cross‐Point Resistive Switching Memory Comprising p‐Type SnO Bilayers

Cited by 29 publications

References 38 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

Polarity Reversal in the Bipolar Switching of Anodic TiO₂Film

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Nanoscale Cross‐Point Resistive Switching Memory Comprising p‐Type SnO Bilayers

Cited by 29 publications

References 38 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

Polarity Reversal in the Bipolar Switching of Anodic TiO2Film

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Polarity Reversal in the Bipolar Switching of Anodic TiO₂Film