Abstract:Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography owing to its high resolution, excellent line-edge roughness (LER) and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ need to be significantly improved to have HSQ resists adopted for volume manufacturing. Here we develop novel organosilicate e-beam resists with improved e-beam sensitivity and stability as an alternative to HSQ resists. Copolymers of norbornene ethyltrimet… Show more
“…Norbornene or chloromethylphenyl groups have been embedded into HSQ while different chelating molecules have been introduced into spin-on alumina-based resists in order to increase their sensitivity [35][36][37]. Moreover, fullerene C60 or silica particles have been incorporated in ZEP520 in order to improve its mechanical properties, thus preventing collapse of high aspect ratio structures, and to increase etch resistance.…”
“…Norbornene or chloromethylphenyl groups have been embedded into HSQ while different chelating molecules have been introduced into spin-on alumina-based resists in order to increase their sensitivity [35][36][37]. Moreover, fullerene C60 or silica particles have been incorporated in ZEP520 in order to improve its mechanical properties, thus preventing collapse of high aspect ratio structures, and to increase etch resistance.…”
Novel positive-tone hybrid resists developed by vapor-phase inorganic infiltration feature fully tunable resist performance parameters and high-aspect-ratio pattern transfer capability.
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