High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

Grenci, Gianluca; Zanchetta, Erika; Pozzato, Alessandro; Giustina, Gioia Della; Brusatin, Giovanna; Tormen, Massimo

doi:10.1016/j.apmt.2015.06.003

Cited by 10 publications

(15 citation statements)

References 47 publications

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“…Grencia et al 14 found that films spin-coated from the diluted solution were spoiled by the presence of pits when deposited in a clean room environment at relative humidity (RH) of 50-60 %, while much smoother films were obtained performing the spin-coating in a glove box at ~100 ppm relative humidity (RH). We never observed such a problem, obtaining perfectly flat and defect-free spin-coated resist layers.…”

Section: Resultsmentioning

confidence: 99%

“…The resist is synthesized using a sol-gel method starting with aluminum-tri-sec-butoxide (97%, Aldrich) and triethoxyphenylsilane (98%, Aldrich). Note that we replaced the trimethoxyphenylsilane used in the original publications 13,14 with the less toxic triethoxyphenylsilane. The aluminum-tri-sec-butoxide was left stirring 1 h at 70 °C in a solution of methoxyethanol and acetic acid in the molar ratio of 1:21:4.3.…”

Section: Methodsmentioning

confidence: 99%

“…The samples were pre-baked for 2 min at 100 °C in order to remove the residual solvent and exposed with an EBL system (VISTEC EBPG5000+) at 100 keV and 250 pA and a FHIBL system (ORION NanoFab from Zeiss) at 30 keV. Before development, the resist was typically post-baked at 120 °C for 2 min, a temperature calibrated to increase the difference in inorganic condensation between exposed and un-exposed areas (SI in Grencia et al 14 ). It should be noted that the post-baking temperature optimization in 14 was made on UVexposed resist while the optimized post-baking temperature for electron/ion-beam exposed resist may be different.…”

Section: Methodsmentioning

confidence: 99%

“…Before development, the resist was typically post-baked at 120 °C for 2 min, a temperature calibrated to increase the difference in inorganic condensation between exposed and un-exposed areas (SI in Grencia et al 14 ). It should be noted that the post-baking temperature optimization in 14 was made on UVexposed resist while the optimized post-baking temperature for electron/ion-beam exposed resist may be different. The samples were developed in a HCl:IPA solution (1÷2:100) for a few minutes (2÷5 min) at room temperature (21 °C), rinsed in IPA for 1 min and dried under a nitrogen stream.…”

Section: Methodsmentioning

confidence: 99%

“…Used as negative-tone resist for EBL (at 3 keV) the authors of the study demonstrated isolated features down to 11 nm and an exceptional selectivity (100:1) when used as a mask for inductively coupled plasma (ICP) etching of silicon in fluorinated plasmas. 14 In this work -performed within the framework of the EU project NFFA-Europe (Nanoscience Foundries and Fine Analysis), the H2020 framework program for research and innovation, and grant agreement 654360 -we explore the possibility to use such an alumina-based resist for sub-10 nm patterning of silicon. The resist is used as a negative-tone resist and exposed using an EBL system at 100 keV as well as a FHIBL system at 30 keV.…”

Section: Introductionmentioning

confidence: 99%

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Sub-10 nm electron and helium ion beam lithography using a recently developed alumina resist

Cattoni

Mailly

Dalstein

et al. 2018

Microelectronic Engineering

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Electron beam lithography (EBL) at sub-10 nm resolution is mainly limited by resist contrast and proximity effects. In this work, we investigate the use of a recently developed alumina-based resist as a negative-tone resist for electron EBL at 100 keV and focused helium ion beam lithography (FHIBL). The resist is synthesized using a sol-gel method and turns into a near completely inorganic alumina system when exposed to the electron/ion beam. We first investigate the effect on the resist contrast curve on i) development temperature; ii) stability of the resist after exposure and before post-baking and development; and iii) aging of the resist solution. We demonstrate the patterning of isolated features as small as 6.5 nm using an EBL and 5 nm using FHIBL and a resolution down to 10 nm for FHIB exposed films. Finally, we demonstrate the pattern transfer of 10 nm lines with an aspect ratio of 10 in silicon, using an optimized reactive ion etching process.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Sub-10 nm electron and helium ion beam lithography using a recently developed alumina resist

Cattoni

Mailly

Dalstein

et al. 2018

Microelectronic Engineering

View full text Add to dashboard Cite

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Integrating Micro Process Chemistry into an NMR Spectrometer

Schulte-Hermann,

Yang,

Hurtado Rivera

et al. 2023

Chemie Ingenieur Technik

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Miniaturization has proven to be a compelling strategy in many research areas and continuous progress in micro fabrication has contributed to its growing popularity. These advances offer opportunities in analytical characterization technologies. Nuclear magnetic resonance is one such characterization method that has greatly benefited from miniaturization. Many research opportunities remain to be explored, leveraging the advantages of miniaturization in NMR. Here, the benefits of NMR‐miniaturization in the fields of micro process engineering, gas‐based hyperpolarization, and small‐scale bioreactors are reviewed. These applications are discussed in the context of modern micro fabrication approaches and materials, highlighting the most compatible with NMR applications.

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