Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

Tiwale, Nikhil; Subramanian, Ashwanth; Kisslinger, Kim; Lu, Ming; Kim, Jiyoung; Stein, Aaron; Nam, Chang‐Yong

doi:10.1039/c9tc02974e

Cited by 40 publications

(45 citation statements)

References 80 publications

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“…Nam's team prepared organic-inorganic hybrid positive photoresist containing aluminium. 32 Aer spin-coating PMMA (polymethyl methacrylate) lm on the substrate, trimethyl aluminum (TMA) was injected into the lm by atomic layer deposition, and then steam was introduced to convert TMA into aluminum Oxide (AlO x ). Through different numbers of cycles, the amount of AlO x formed in PMMA could be adjusted.…”

Section: Inorganic Photoresist Containing Aluminiummentioning

confidence: 99%

Review of recent advances in inorganic photoresists

Luo

et al. 2020

RSC Adv.

107

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Section: Inorganic Photoresist Containing Aluminiummentioning

confidence: 99%

Review of recent advances in inorganic photoresists

Luo

et al. 2020

RSC Adv.

107

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“…The resist contrast was estimated using expression,

γ = \frac{1}{\log_{10} (\frac{D_{1}}{D_{0}})}

where D 0 is onset dose at which the resist starts to crosslink and D 1 is dose at which the entire thickness of the resist is crosslinked and rendered insoluble in developer. [ 73–75 ]…”

Section: Methodsmentioning

confidence: 99%

Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

Tiwale

Senanayak

Rubio‐Lara

et al. 2021

Adv Elect Materials

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Zinc oxide (ZnO) has been extensively investigated for use in large‐area electronics; in particular, the solution‐processing routes have shown increasing promise towards low‐cost fabrication. However, top‐down fabrication approaches with nanoscale resolution, towards aggressively scaled device platforms, are still underexplored. This study reports a novel approach of direct‐write electron‐beam lithography (DW‐EBL) of solution precursors as negative tone resists, followed by optimal precursor processing to fabricate micron/nano‐field‐effect transistors (FETs). It is demonstrated that the mobility and current density of ZnO FETs can be increased by two orders of magnitude as the precursor pattern width is decreased from 50 µm to 100 nm. These nano‐FET devices exhibit field‐effect mobility exceeding ≈30 cm2 V−1 s−1 and on‐state current densities reaching 10 A m−1, the highest reported so far for direct‐write precursor‐patterned nanoscale ZnO FETs. Using atomic force microscopy and parametric modeling, the origin of such device performance improvement is investigated. The findings emphasize the influence of pre‐decomposition nanoscale precursor patterning on the grain morphology evolution in ZnO and, consequently, open up large‐scale integration, and miniaturization opportunities for solution‐processed, high‐performance nanoscale oxide FETs.

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“…Despite some excellent characteristics, PMMA resists have a number of drawbacks that have prevented their widespread use, such as the need for organic solvent development, high outgassing, poor etch resistance, and poor sensitivity. Different approaches are proposed to address these drawbacks and even recently it was a reported a new approach for enhancing PMMA pattern transfer performance through an infiltration process resulting in the formation of an AlOx film on top of the PMMA resist film [88]. This approach has been demonstrated so far with e-beam exposure.…”

Section: Non Chemically Amplified Photoresistsmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Manouras

Argitis

2020

Nanomaterials

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

Abstract: Novel positive-tone hybrid resists developed by vapor-phase inorganic infiltration feature fully tunable resist performance parameters and high-aspect-ratio pattern transfer capability.

Cited by 40 publications

References 80 publications

Review of recent advances in inorganic photoresists

Review of recent advances in inorganic photoresists

Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

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