Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4

Décobert, J.; Lagay, N.; Thevenard, B.

doi:10.1016/j.jcrysgro.2008.07.032

Cited by 6 publications

(2 citation statements)

References 8 publications

(18 reference statements)

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“…However, it affects the Al x In x −1 As layer composition as the bromide species react both with vapor and solid phase during growth, as reported in Ref. . Depending on chosen CBr 4 flow and growth conditions, the TMAl/TMIn ratio should be readjusted consequently to insure lattice‐matched AlInAs:C.…”

Section: Methodsmentioning

confidence: 95%

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InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Soresi

Hamon

Larrue

et al. 2018

Physica Status Solidi (a)

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Multijunction solar cells based on III-V compounds are one of the most effective possibilities to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs:C/InP:S tunnel junctions are fabricated using MOVPE. Type-II interface band alignment of AlInAs/InP heterostructure is ideal for increasing the photogenerated carriers tunneling. Furthermore, wide bandgaps ensure a high transmission of the incident light. The J-V characteristics of the final devices show very good results in terms of tunneling peak current density (1000 A cm À2 ) and specific resistance at low applied bias, making them compatible for photovoltaic applications.The authors declare no conflict of interest.

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Section: Methodsmentioning

confidence: 95%

“…The two layers constituting the TJ were firstly separately grown in thicker structures, then characterized by high‐resolution X‐ray diffraction (XRD) and Electrochemical Capacitance‐Voltage profile (ECV). As a p dopant, C was chosen instead of Zn because of its very low diffusion coefficient and extremely high achievable doping levels …”

Section: Methodsmentioning

confidence: 99%