InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Soresi, Stefano; Hamon, Gwénaëlle; Larrue, Alexandre; Alvarez, José; Pires, M. P.; Décobert, J.

doi:10.1002/pssa.201700427

Cited by 5 publications

(3 citation statements)

References 15 publications

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“…The growth temperatures were 630 °C for the n-type layers and 600 °C for the p-type layers. The growth conditions for the tunnel junction are somewhat different from the rest of the cell and they have been thoroughly described elsewhere [29]. The InP/AlInAs tunnel junction allows to reach a high peak tunneling current of 1570 A/cm 2 at voltages between 120 mV and 160 mV, thus suggesting very low losses under tandem cell operation.…”

Section: Methodsmentioning

confidence: 99%

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Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

et al. 2023

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The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a prospective study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a commercially available Si template by direct MOVPE growth. The InP top cell and the InGaAs bottom cell were firstly separately grown and optimized using InP substrates, which exhibited conversion efficiencies of 13.5% and 11.4%, respectively. The two devices were then combined in a tandem device by introducing an intermediate InP/AlInAs lattice-matched tunnel junction, showing an efficiency of 18.4%. As an intermediate step towards the realization of the tandem device on Si, the InP and InGaAs single junction solar cells were grown on top of a commercial InP/GaP/Si template. This transitional stage enabled to isolate and evaluate the effects of the growth of III-V on Si on the photovoltaic performance through the comparison with the aforementioned devices on InP. Each cell was electrically characterized by external quantum efficiency and dark and illuminated current-voltage under solar simulator. The material quality was also analyzed by means of X-ray diffraction, Atomic-Force Microscopy, Transmission Electron and Scanning Electron Microscopy. The III-V on Si devices showed efficiencies of 3.6% and 2.0% for the InP and InGaAs solar cells, respectively.

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Section: Methodsmentioning

confidence: 99%

“…We have first fabricated and characterized the two single junction cells (SJCs) grown on InP substrates. Then, we have combined them into a tandem device fabricated on an InP substrate, by including an intermediate, transparent InP/ AlInAs tunnel junction previously presented in [29].…”

Section: Introductionmentioning

confidence: 99%

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

et al. 2023

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“…InP:S-based solar devices have been reported in the literature. In particular, Faur et al [16] reported a p + n (Cd,S) heterojunction InP solar cells for space applications and a InP:S/AlInAs:C tunnel junction, presented by the III-V Lab group [17], has been successfully produced and used to fabricate InP/ InGaAs tandem solar cells [18].…”

Section: Introductionmentioning

confidence: 99%

Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination

et al. 2022

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Solar cells are complex devices, being constituted of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. This paper applies Kelvin probe force microscopy (KPFM) to study materials and interfaces with nanometer scale imaging of the surface potential in the dark and under illumination. KPFM measurements are highly sensitive to surface states and to the experimental measurement environment influencing the atomic probe operating conditions. Therefore, in order to develop a quantitative understanding of KPFM measurements, we have prepared a dedicated structured sample with alternating layers of InP:S and InP:Fe whose doping densities were determined by secondary-ion mass spectroscopy. We have performed KPFM measurements and shown that we can spatially resolve 20 nm thick InP layers, notably when performed under illumination which is well-known to reduce the surface band-bending.

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Multiple tunnel diode peaks in I–V curves of a multijunction laser power converter

Wang

Yin

Sheng

et al. 2022

Applied Physics Letters

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How to characterize tunnel diodes (TDs) in multijunction photovoltaic cells is a challenge. Here, we investigate a locally illuminated six-junction InGaAs laser power converter (LPC) by measuring the wide-voltage-range I–V curves. Multiple TD peaks are observed in the reverse breakdown area of the dark-state I–V curve, while with increased laser power, the peaks break into more subpeaks successively, and the subcell photocurrent steps are found to shrink due to the moving subpeaks at the right side of the steps. A model of a multijunction LPC under localized illumination is proposed, and the shrinkage of a step originates from the larger local overproduced subcell photocurrent than the local peak current of the very TD below this subcell. Therefore, the correspondences between TD peaks in the I–V curves and their physical locations in the structure of the LPC are determined. This work gives in-depth insight into the current limiting mechanism of TDs in multijunction photovoltaic devices under non-uniform illumination and expands the knowledge of multijunction photovoltaic devices.

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InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Cited by 5 publications

References 15 publications

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination

Multiple tunnel diode peaks in I–V curves of a multijunction laser power converter

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