Micro‐concentrator photovoltaic (CPV), incorporating micro‐scale solar cells within concentrator photovoltaic modules, promises an inexpensive and highly efficient technology that can mitigate the drawbacks that impede standard CPV, such as resistive power losses. In this paper, we fabricate micro‐scale multijunction solar cells designed for micro‐CPV applications. A generic process flow, including plasma etching steps, was developed for the fabrication of complete InGaP/InGaAs/Ge microcells with rectangular, circular, and hexagonal active areas down to 0.089 mm2 (0.068‐mm2 mesa). Large cells (>1 mm2) demonstrate good electrical performance under one sun AM1.5D illumination, but a degradation in the open‐circuit voltage (VOC) is observed on the smallest cells. This effect is attributed to perimeter recombination for which a passivation effect by the antireflective coating partially recovers the VOC. The VOC penalty for small cells is also reduced under high‐intensity illumination, from 3.8% under sun to 1.0% at 974 suns. High intensity illumination yields an efficiency of 33.8% under 584 suns for a 0.25‐mm2 and microcells are expected to show higher efficiency than standard cells under very high concentration.
Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.
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