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The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1-xAs and InxGa1-xAs on a GaAs substrate. The surface of BAM-L200 provides a flat pattern with stripe widths ranging down to 1 nm. Calibration distances, grating periods and stripe widths have been certified by TEM with traceability to the length unit. The combination of gratings, isolated narrow stripes and sharp edges of wide stripes offers plenty of options for the determination of lateral resolution, sharpness and calibration of length scale at selected settings of imaging surface-analytical instruments. The feasibility of the reference material for an analysis of the lateral resolution is demonstrated in detail by evaluation of ToF-SIMS, AES and EDX images. Other applications developed in the community are summarized, too. BAM-L200 fully supports the implementation of the revised International Standard ISO 18516 (in preparation) which is based on knowledge outlined in the Technical Report ISO/TR 19319:2013.

For automotive light detection and ranging (LiDAR) systems diode lasers emitting short optical pulses with a good beam quality and a low wavelength shift over a wide operating temperature range is needed. In this paper, theoretical and experimental results of broad area laser diodes specially designed for this application are presented. Optical pulse powers of tens of watts and pulse lengths in the 10 ns-range for wavelengths near 905 nm and environmental temperatures between 15 and 85 C are achieved. Due to the integrated Bragg grating the wavelength shift with temperature is as low as 65 pm K À1 . The contact mesa with a width of 50 μm leads to a lateral M 2 value of about 9. Streak camera measurements of the temporal evolution of the lateral near field intensity reveal that the highest intensity is emitted near the mesa edges. Simulation results of power current characteristics indicate that the power saturation experimentally observed can be attributed to nonlinear effects such as two-photonabsorption and gain compression.

Photoluminescence (PL) spectra and time-resolved PL data from AlGaAs/GaAs superlattice structures containing thin InAs layers of about 1–3 monolayer grown on semi-insulating (001)-oriented GaAs substrates at lowered temperatures are studied. The size distribution of InAs quantum dots (QDs) among different families (modes) is controlled by variation of growth temperature and/or growth interruption. We demonstrate the stabilization of the PL magnitude caused by strong coupling between different modes and the full width at half maximum of “large size” QD modes within a certain temperature interval (50–150 K) due to feeding of the radiative transitions from nonradiative decay and carrier transfer arising from decaying excitonic states of the small size QD modes. Strong competition between different channels of ground state relaxation leads to an oscillating dependence of the PL transient for the small size QD mode. Efficient inter- and intramode tunneling rules out “bottleneck restrictions” for the PL. The parameters of intra- and intermode tunneling are determined from time-resolved PL.

Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs featuring increased optical confinement in the quantum well, Γ, are shown to have improved temperature stability without compromising series resistance, internal efficiency or losses. Specifically, we present here vertical design considerations for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing Γ from 0.26% to 1.1%, and discuss the impact on power saturation mechanisms. The results indicate that key power saturation mechanisms at high temperatures originate in high threshold carrier densities, which arise in the quantum well at low Γ. The characteristic temperatures, T 0 and T 1 , are determined under short pulse conditions and are used to clarify the thermal contribution to power limiting mechanisms. Although increased Γ reduces thermal power saturation, it is accompanied by increased optical absorption losses in the active region, which has a significant impact on the differential external quantum efficiency, h diff . To quantify the impact of internal optical losses contributed by the quantum well, a resonator length-dependent simulation of h diff is performed and compared to the experiment, which also allows the estimation of experimental values for the light absorption cross sections of electrons and holes inside the quantum well. Overall, the analysis enables vertical designs to be developed, for devices with maximized power conversion efficiency at high CW optical power and high temperatures, in a trade-off between absorption in the well and power saturation. The best balance to date is achieved in devices using EDAS designs with G = 0.54%, which deliver efficiencies of 50% at 14 W optical output power at an elevated junction temperature of 105 °C.

A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third-order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm 2 . The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm −1 . The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.