Efficient High-Power Laser Diodes

Growth of laser diode structures with emission wavelength beyond 1100nm for yellow–green emission by frequency conversion

“…In addition, structures without GaAs spacer and 7 nm QW thickness have higher internal efficiency. The reason for that is still unclear, but lower internal efficiencies for the thinner QWs point amongst other things to carrier escape from the active region into the waveguide or cladding layers and/or carrier loss at non-radiative defect centers within the active region [13]. The integration of GaAs spacers leads not only to a suppression of the intermixing but also to changes in the band structure around the QW, i.e.…”

A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current

“…LD, which indicates smaller carrier leakage. In general, electrons (or holes) leakage into p-cladding (or n-cladding) layer leads to nonradiative recombination with injected holes (or electrons), resulting in very large optical loss and thermal resistance [19,20]. Therefore, the optical loss and absorption of New LD can be largely decreased and its threshold current can be lower than that of Ref.…”

Мощностные Характеристики И Температурная Зависимость Угловой Расходимости Излучения Лазеров С Приповерхностной Активной Областью

“…46439.17345 Увеличение температуры активной области полупроводникового ла-зера, работающего в непрерывном режиме, является одной из основных причин изменения лазерных характеристик с ростом тока накачки, а также ограничения предельной мощности лазерного излучения [1]. Снижение теплового сопротивления лазерного диода позволяет снизить влияние саморазогрева.…”