2014
DOI: 10.1016/j.ceramint.2014.05.148
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Optical properties of amorphous Al2O3 thin films prepared by a sol–gel process

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Cited by 82 publications
(32 citation statements)
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“…It is interesting to observe the appearance of one peak at 74.5–74.6 eV for all the spectra. Accordingly with a typical BE for Al 3+ 2p of 74.2 eV, our values are slightly displaced (ΔBE = +0.3 eV).…”
Section: Resultscontrasting
confidence: 44%
“…It is interesting to observe the appearance of one peak at 74.5–74.6 eV for all the spectra. Accordingly with a typical BE for Al 3+ 2p of 74.2 eV, our values are slightly displaced (ΔBE = +0.3 eV).…”
Section: Resultscontrasting
confidence: 44%
“…Al 2 O 3 film can be fabricated by several methods, including chemical vapor deposition [2], electron beam evaporation [3], magnetron sputtering [4], the sol-gel process [5], pulsed laser deposition [6], and atomic layer deposition [7]. Among these techniques, Atomic Layer Deposition (ALD), a low-temperature atomic chemical vapor deposition technique, has advantages in homogeneity, compactness, precise composition, and thickness controllability of the target material onÅgstrom or monolayer level [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…In order to solve this problem, some gate dielectrics with higher dielectric constant than SiO 2 (k ¼ 3.9) have been paid more attention, such as Ta 2 O 5 , HfO 2 , Al 2 O 3 , TiO 2 , Y 2 O 3 , ZrO 2 , etc. [2][3][4][5][6][7][8][9][10]. Among these gate oxides, zirconium oxide (ZrO 2 ) is one of the attractive materials.…”
Section: Introductionmentioning
confidence: 99%