Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

“…2. The zirconia film presents high transparency in the visible region spectra and a direct bandgap E G = 5.8 eV, in good agreement with published values [11,24]. The diffractogram of zirconia thin films, dip-coated on glass substrates and annealed at 450°C is presented in Fig.…”

“…In order to find a substitute for the well-established silicon dioxide (SiO 2 ) in metal-oxide-semiconductor field-effect transistors (MOSFETs) [6], dielectric oxides with high dielectric constant (high-k) have been investigated, such as hafnia (HfO 2 ), alumina (Al 2 O 3 ), and zirconia (ZrO 2 ), because they are suitable to improve the channel modulation in MOSFETs through reduced tunneling current, even for small thicknesses [7][8][9]. Zirconia is a favorable alternative due to its high dielectric constant (k = 18-26), wide bandgap (4.7-7.8 eV), good thermal stability against silicate formation, excellent chemical inertness, high breakdown field, and good catalytic properties [2,3,10,11].…”

Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor

“…Zirconium oxide (ZrO x ) has gained a large amount of attention in different applications such as thin film transistors (TFT) [1,2], sensors [3,4], display technology [1], and memory technology [5,6] due to its unique thermal stability, optical, and electronic properties. Additionally, in TFT applications, ZrO x has been employed as a plausible replacement for the silicon oxide dielectric layer, owing to its high permittivity (κ) (~25), and wide bandgap (5.1-7.8 eV) [7][8][9]. However, the production of ZrO x dielectrics by a wet chemical process is still slow because of high processing temperature (above 400 • C), arising from the need to decompose the organic moiety from the film's matrix, which in turn increases the thermal budget [10,11].…”

Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor

“…Nevertheless, the influence of interfacial layer towards the overall k values for Al x Zr y O z films grown at 600 C and 800 C were less extensive and higher k values of 21.0 and 16.1 were attained, respectively. The calculated k values for these two samples were in the range of theoretical k values of ZrO 2 (k = 20-30) 15 and Al 2 O 3 (k = 8-10) 19,20 but were larger than that of ZrO 2 film (k = 13) produced via pulse laser deposition. 61 The acquisition of the largest k value of 21 in this work at 600 C indicated that the corresponding Al x Zr y O z film produced at 600 C was closer to the k value for ZrO 2 , suggesting that ZrO 2 phase might contribute to the increase in k value.…”

“…6,14 Low-k SiO 2 has proven to be very versatile in suppressing the injection of electrons to overcome the barrier height between SiO 2 and Si substrate due to the possession of large conduction band offset of approximately 3.20 eV. 14 Particular interest has been devoted to the exploration of high-k ZrO 2 as the passivation layer for Si, owing to its unique properties with regards to intrinsic defects 15,16 that would alter the band gap of ZrO 2 . In addition to serving as a high-k material, ZrO 2 has been also found use as an electrolyte in solid oxide fuel cell 17 and solar thermochemical vaporisation of CO 2 , 18 in which the effectiveness was enhanced after doping with cerium oxide (CeO 2 ).…”