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The design of a sandwich structure is conducive to enhancing the dielectric constant and energy density of SrTiO3 nanocomposite thick films.

A periodic layer structure consisting of sol-gel-derived SrTiO and anodized AlO has been designed and fabricated by interface engineering. Utilizing the anodized AlO to be the blocking layer, not only the local high electric field around the hole and crack defects could be significantly reduced but also, and equally important, the blocking layer undertaking higher electric field could effectively decrease the breakdown probability of a SrTiO layer based on the finite element analysis. As the sample has been modified, the barrier height of the charge carrier was increased through fitting the conductance activation energy ( H). In addition, the space charge-limited conductance mechanism was almost eliminated according to the fitted results in the ln E-ln J diagram, indicating that most of the charge carrier released from traps were blocked or isolated by the AlO layer. As a result of the periodic interface modification, the leakage current was decreased 2 orders of magnitude and the breakdown strength was enhanced from 144.13 to 754.23 MV m. More importantly, the ultimate energy density is up to 39.49 J cm, which is 1505% greater than the sample without interface modification.

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The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.