Optical losses in p-type layers of GaN ridge waveguides in the IR region

Westreich, Ohad; Katz, M.; Atar, Gil; Paltiel, Yossi; Sicron, Noam

doi:10.1063/1.4992103

Cited by 4 publications

(5 citation statements)

References 19 publications

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“…Previous works present a detailed report of the design, fabrication and linear characterization of the GaN waveguides [25,28]. A brief description is provided here for completeness.…”

Section: Design and Fabrication Of Gan Ridge Waveguidesmentioning

confidence: 99%

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Munk

Katzman

Westreich

et al. 2017

Opt. Mater. Express

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Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work we provide a first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6±0.45 [Wm] -1 , and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4±1e-18 [m 2 /W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.

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“…Previous works present a detailed report of the design, fabrication and linear characterization of the GaN waveguides [25,28]. A brief description is provided here for completeness.…”

Section: Design and Fabrication Of Gan Ridge Waveguidesmentioning

confidence: 99%

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Munk

Katzman

Westreich

et al. 2017

Opt. Mater. Express

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“…The optical setup that is used to measure the WG transmission at different wavelengths is illustrated schematically in Figure . The setup details were reported previously, and are described here briefly. A narrow tunable laser source ( λ ∼ 1064 or 1550 nm) was coupled to the GaN WG using a lens.…”

Section: Methodsmentioning

confidence: 99%

“…However, in the IR region, there are very few data . In a recent work, we have demonstrated that p‐GaN layers introduce high losses in the NIR region as well. Here, we describe this work briefly to provide a complete picture of the optical loss mechanisms that affect the p‐n WG modulator.…”

Section: Losses In P‐n Doped Gan Wgs Designmentioning

confidence: 99%

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Reducing Optical Losses in GaN Waveguides – Toward an Electro‐Optic Phase Modulator

Westreich

Atar

Paltiel

et al. 2018

Physica Status Solidi (a)

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In recent years, gallium nitride (GaN) has been investigated as a potential material for various integrated photonic devices. A key component of integrated photonic devices is a voltage‐controlled phase modulator in an optical waveguide (WG) design. To date, the main obstacles in the realization of such a device are significant optical losses that are related to various mechanisms. In this research, the main factors for optical losses in a GaN phase modulator are experimentally studied. The suggested design is based on a reverse‐biased p–n junction ridge WG scheme. The losses are determined mainly using the Fabry–Perot method at a wavelength of 1064 nm, which is important for high‐optical‐power applications. The contribution of the ridge waveguide wall roughness losses, the p‐doped layer absorption, and the metallic p‐contacts is evaluated. Based on these results, an optimized structure of an electro‐optical GaN phase modulator is proposed. The modulator voltage response is calculated while taking optical polarization effects into account.

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“…Nowadays, state of the art LDs have α i = 1 cm −1 and the maximum optical power is 7.2 W [4]. It was shown that, in the case of InGaN-based LDs, the high α i originates from light absorption in the Mg-doped layers [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Hajdel

Muzioł

Nowakowski-Szkudlarek

et al. 2019

Acta Phys. Pol. A

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We investigate influence of Mg doping concentration and the thickness of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy. Using simple measurements of light-current characteristics and simulations, two main conclusions are drawn. First one-the Mg dopant is responsible for optical losses, as in the case of the laser diodes grown by metalorganic vapor phase epitaxy. Second one-the low Mg doping causes electrons to overflow through electron blocking layer. Additionally, tunneling is proposed as an escape mechanism of carriers from active region for thin electron blocking layer.

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Optical losses in p-type layers of GaN ridge waveguides in the IR region

Cited by 4 publications

References 19 publications

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Reducing Optical Losses in GaN Waveguides – Toward an Electro‐Optic Phase Modulator

Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

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