Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Hajdel, Mateusz; Muzioł, G.; Nowakowski-Szkudlarek, Krzesimir; Siekacz, M.; Feduniewicz-Żmuda, Anna; Wolny, P.; Skierbiszewski, C.

doi:10.12693/aphyspola.136.593

Cited by 3 publications

(4 citation statements)

References 19 publications

(26 reference statements)

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“…where g is the material gain, Γ active is the confinement factor of active region, j trans is the transparency current, α m are mirror losses, v is the frequency of emitted light, q is the elementary charge, and h is the Planck constant; α i is the sum of losses originating from highly doped EBL α EBL and additional losses from other layers α 0 . The Mg doped layers absorption coefficient α Mg is assumed to increase linearly with Mg doping through the relation α Mg = 112 cm 2 × Mg concentration (in units of 10 19 cm -3 ), which was found in our previous paper [16]. The α EBL for Mg: 2 × 10 19 cm -3 equals 5.4, 5.9, and 6.2 cm -1 , for 8%, 4% and 0% InGaN WG, respectively.…”

Section: Modelling the Operating Parameters Of Ldsmentioning

confidence: 84%

“…A simple linear model correlating Mg concentration with light absorption was assumed. Based on our previous experimental study, a relation α Mg = 112 cm 2 × Mg concentration (in units of 10 19 cm -3 ) was determined [16].…”

Section: Simulation Frameworkmentioning

confidence: 99%

“…In Fig. 5 Because of the influence of WG composition on the EBL height, the doping level of EBL has to be also discussed since doping itself strongly affects the barrier height [16]. As was discussed in Section 3.1, the EBL contribution to α i for high In content WGs increases, so desirably the Mg level should be kept as low as possible.…”

Section: Influence Of Ingan Waveguide On Injection Efficiencymentioning

confidence: 99%

See 2 more Smart Citations

Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

Hajdel

Muzioł

Nowakowski-Szkudlarek

et al. 2020

Optica Applicata

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The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.

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Section: Modelling the Operating Parameters Of Ldsmentioning

confidence: 84%

Section: Simulation Frameworkmentioning

confidence: 99%

Section: Influence Of Ingan Waveguide On Injection Efficiencymentioning

confidence: 99%

See 1 more Smart Citation

Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

Hajdel

Muzioł

Nowakowski-Szkudlarek

et al. 2020

Optica Applicata

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“…Values for the efficiency of individual nitride-based VCSEL lasers are difficult to find in the literature. For InGaN-based laser diodes, injection efficiency values range from 100% to 75%, depending on factors such as the concentration of magnesium doping and the thickness of the electron-blocking layer (EBL) [72,73]. The radiative recombination efficiency was assumed to be 100% [73][74][75].…”

Section: Numerical Modelmentioning

confidence: 99%

Study on Bottom Distributed Bragg Reflector Radius and Electric Aperture Radius on Performance Characteristics of GaN-Based Vertical-Cavity Surface-Emitting Laser

Dąbrówka,

Sarzała

2024

Materials

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This article presents the results of a numerical analysis of a nitride-based vertical-cavity surface-emitting laser (VCSEL). The analyzed laser features an upper mirror composed of a monolithic high-contrast grating (MHCG) and a dielectric bottom mirror made of SiO2 and Ta2O5 materials. The emitter was designed for light emission at a wavelength of 403 nm. We analyze the influence of the size of the dielectric bottom mirrors on the operation of the laser, including its power–current–voltage (LIV) characteristics. We also study the effect of changing the electrical aperture radius (active area dimensions). We demonstrate that the appropriate selection of these two parameters enables the temperature inside the laser to be reduced, lowering the laser threshold current and increasing its optical power output significantly.

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Electrically pumped blue laser diodes with nanoporous bottom cladding

et al. 2022

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We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding grown by plasma-assisted molecular beam epitaxy on c-plane (0001) GaN. After the epitaxy of the LD structure, highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6·1019 cm-3 was electrochemically etched to obtain porosity of 15 ± 3% with pore size of 20 ± 9 nm. The devices with nanoporous bottom cladding are compared to the reference structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The design of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.

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Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Cited by 3 publications

References 19 publications

Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes

Study on Bottom Distributed Bragg Reflector Radius and Electric Aperture Radius on Performance Characteristics of GaN-Based Vertical-Cavity Surface-Emitting Laser

Electrically pumped blue laser diodes with nanoporous bottom cladding

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