2017
DOI: 10.1364/ome.8.000066
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Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Abstract: Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work we provide a first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6±0.45 [Wm] -1 , and the… Show more

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Cited by 25 publications
(19 citation statements)
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“…Even though Figure 3 illustrates good agreement between several experimental data sets and the theoretical prediction, a few studies have reported n2 for GaN orders of magnitude higher than the ones presented here (not shown in Figure 3), for both positive and negative values [23,44,45]. For some of them (340 × 10 −20 m 2 /W at 0.80 eV [23] and ~1 × 10 −16 m 2 /W at 2.33 eV [44]), the difference may be related to the highly indirect experimental method that was used to measure the nonlinear refractive index, such as four-wave mixing experiments, which are susceptible to larger error. For literature reports that, similar to our work, used the closed-aperture Z-scan technique (−2.9 × 10 −16 m 2 /W at 3.37 eV [45]), significant discrepancies may arise from the fact that pulses with a high repetition rate (82 MHz) which were centered at energies too close to the one-photon absorption edge have been used.…”
Section: Contribution G (Effect) (X 1 X 2 )supporting
confidence: 73%
See 1 more Smart Citation
“…Even though Figure 3 illustrates good agreement between several experimental data sets and the theoretical prediction, a few studies have reported n2 for GaN orders of magnitude higher than the ones presented here (not shown in Figure 3), for both positive and negative values [23,44,45]. For some of them (340 × 10 −20 m 2 /W at 0.80 eV [23] and ~1 × 10 −16 m 2 /W at 2.33 eV [44]), the difference may be related to the highly indirect experimental method that was used to measure the nonlinear refractive index, such as four-wave mixing experiments, which are susceptible to larger error. For literature reports that, similar to our work, used the closed-aperture Z-scan technique (−2.9 × 10 −16 m 2 /W at 3.37 eV [45]), significant discrepancies may arise from the fact that pulses with a high repetition rate (82 MHz) which were centered at energies too close to the one-photon absorption edge have been used.…”
Section: Contribution G (Effect) (X 1 X 2 )supporting
confidence: 73%
“…As expected, the design of such devices were supported by several studies on nonlinear optical characterization of GaN's second-order susceptibility [18][19][20][21]. Furthermore, GaN-based devices using high-quality resonators [22] and ridge-waveguides [23] were recently demonstrated to exhibit third-order optical nonlinearities, manifested as four-wave mixing. However, the third-order susceptibility of GaN has not been thoroughly characterized yet, especially in the telecommunication spectral range and when excited with femtosecond pulses.…”
Section: Introductionmentioning
confidence: 68%
“…Currently, various characterization techniques allow for measurements of nonlinear optical constants such as the absorption coefficient (β) or the refractive index ( n 2 ). These techniques include the z -scan method (both β and n 2 ) [14], degenerate four-wave mixing (only n 2 ) [15], nearly degenerate three-wave mixing (only n 2 ) [16], optical Kerr gate and ellipse rotation measurements (both β and n 2 ) [17], self-phase modulation (only n 2 ) [18] and Mach–Zehnder interferometry (both β and n 2 ) [19]. However, please note that all these methods measure nonlinearity in the bulk phase or in thin films [20].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, various characterization techniques allow measurements of nonlinear optical constants such as absorption ( ) or refractive index (n2). These techniques include Z-scan (both , n2) [14], degenerate four-wave mixing (only n2) [15], nearly degenerate three-wave mixing (only n2) [16], optical Kerr gate and ellipse rotation (both , n2) [17], self-phase modulation (only n2) [18], Mach-Zehnder interferometry (both , n2) [19] etc. However, please note that all these methods measure nonlinearity in the bulk or thin films [20].…”
Section: Introductionmentioning
confidence: 99%