Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance

Sousa, V.; Navarro, G.; Castellani, N.; Coue, M.; Cueto, O.; Sabbione, C.; Noé, Pierre; Perniola, L.; Blonkowski, S.; Zuliani, P.; Annunziata, R.

doi:10.1109/vlsit.2015.7223708

Cited by 27 publications

(28 citation statements)

References 4 publications

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“…In the work of Cheng et al, [24] time-resolved XRD shows the formation of these two phases, Ge and cubic GST-225, from about 266 C for a ramp-rate of 1 C s À1 . For others, the two cubic phases are evidenced following annealing at 350 C, for a higher Ge excess of 45%, [27] or even at 375 C (high Ge content but unknown exact composition). [14] In general, it is noted that the "crystallization" temperature increases as the Ge content in the as-deposited amorphous films increases.…”

Section: Thermal Crystalization Of Ge-rich Alloys: Ge Firstmentioning

confidence: 99%

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On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

Luong

Agati

Ramond

et al. 2020

Physica Rapid Research Ltrs

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Among the many possible phase‐change materials that can be used in digital memories, Ge‐rich GeSbTe (GGST) alloys are of special interest due to their much higher thermal stability, i.e., the higher crystallization temperature, they offer. However, in contrast to congruent materials which may transit from the amorphous to the crystalline state while keeping the same homogeneous chemical composition, GGST crystallization is obtained through the successive formation of the Ge and GST‐225 phases. For this reason, they show distinct properties and characteristics from those found in the canonical GST‐225 and GeTe alloys. Herein, some of these characteristics, their crystallization kinetics, the effect of N doping and oxidation, and their electrical properties are reviewed and highlighted.

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Section: Thermal Crystalization Of Ge-rich Alloys: Ge Firstmentioning

confidence: 99%

“…[60,61] For GGST, the chemical homogeneity can be found only in the as-deposited layer as it is lost when the dome recrystallizes as a two-phase material. [27] Figure 8. Depth-distributions of the different chemical elements, obtained by integration of STEM-EDX images along the depth.…”

Section: Electrical Characteristics: Percolationmentioning

confidence: 99%

On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

Luong

Agati

Ramond

et al. 2020

Physica Rapid Research Ltrs

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“…Crystallization time as a function of temperature. < ABC is the sum of < I* and < G* , so that the process is quick at high temperature and slow at low temperature the low current regime and the Rampdown SET is high current pulses with increasing fall times [30], [31].…”

Section: Electrical Characterization Methodsmentioning

confidence: 99%

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

Pigot

Bocquet

Gilibert

et al. 2018

IEEE Trans. Electron Devices

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Abstract-In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on modified rate equations with the introduction of a variable related to GST melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.

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“…On the contrary Ge-rich GST compounds, as explained in Ref. [13]- [14], exhibit much higher crystallization temperature and slower crystallization speed at material level; implying at device level better data retention (Figure 8(a)) and lower SET speed (Figure 8(b)), respectively. Such class of material is indeed most suited for embedded applications (ie automotive, smartcard) [11].…”

Section: Pcmmentioning

confidence: 96%

Universal Signatures from Non-Universal Memories: Clues for the Future...

Perniola

Molas

Navarro

et al. 2016

2016 IEEE 8th International Memory Workshop (IMW)

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The quest for the universal memory has been pursued since several years, but as far results from scientific literature do not declare one single technology able to fit all the requirements of the memory hierarchy. Flash and DRAM cover more than 95% of the global sales in the semiconductor memory market [1], but none of the two is able to substitute the other. This appears to be true also for disruptive backend memory technologies, like OxRAM, CBRAM, PCM and MRAM. This paper deals with universal signatures that stand true for such disruptive technologies. A specific analysis on two case examples from the RRAM and the PCM domain, where tradeoffs can be adjusted to target specific applications, is finally proposed. Knowing in advance the tradeoffs of each technology allows us to save precious time in research and development and therefore to accelerate the time-to-market.

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Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance

Cited by 27 publications

References 4 publications

On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

Universal Signatures from Non-Universal Memories: Clues for the Future...

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