Universal Signatures from Non-Universal Memories: Clues for the Future...

Abstract

The quest for the universal memory has been pursued since several years, but as far results from scientific literature do not declare one single technology able to fit all the requirements of the memory hierarchy. Flash and DRAM cover more than 95% of the global sales in the semiconductor memory market [1], but none of the two is able to substitute the other. This appears to be true also for disruptive backend memory technologies, like OxRAM, CBRAM, PCM and MRAM. This paper deals with universal signatures that stand true for such disruptive technologies. A specific analysis on two case examples from the RRAM and the PCM domain, where tradeoffs can be adjusted to target specific applications, is finally proposed. Knowing in advance the tradeoffs of each technology allows us to save precious time in research and development and therefore to accelerate the time-to-market.

Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

“…Our measurements indicate that <5% of cells required program-retry. Program-retry may degrade PWF but the degradation is very minor (from 2×10 5 to 1.72×10 5 ), which can be masked by limiting the endurance cycles to 10 5 (Section V). To evaluate the retention features after 10 5 endurance cycles with program-retry, a 24-hour bake at 165°C was performed (Fig.…”

“…Thus, RRAM enables massive improvements in energy and execution time, especially for data-intensive applications such as deep learning [3,4]. Despite major progress in RRAM technology [5], understanding variations in RRAM and the corresponding system-level impact are open challenges that must be overcome.…”

Phase Change and Magnetic Memories for Solid-State Drive Applications

“…3. Universal plot of the programming window versus the endurance capabilities of different SCMs (reproduced with permission from [15]). access times in terms of hundreds of nanoseconds or less to be synchronous with the normal memory operations of the host system, but with specific power consumption considerations to take into account.…”

“…2). The most accredited are Resistive Memories (RRAM) using either native oxides or the conductive bridge paradigm, Phase Change Memories (PCM), and Magnetic Memories in the Spin-Transfer Torque realization (STT-MRAM) [15], [16]. Each of these technologies features peculiar advantages and drawbacks compared to DRAM and NAND Flash memories, although they target in common the SCM concept.…”

Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM

“…Even if RRAM is seen as a possible replacement for Flash memories due to manufacturing process simplicity, easy integration with logic, lower voltage operation, and good cycling with sufficient retention capability [1]- [3], the intrinsic cellto-cell variability is still preventing its adoption as traditional data storage media [4]- [6]. Beyond that, RRAM gathered interest for several other applications such as neuromorphic systems [7], [8], content-addressable memories (CAM) and nonvolatile SRAM [9], [10].…”