Abstract-In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on modified rate equations with the introduction of a variable related to GST melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.
A Phase-Change Memory (PCM) compact modeling of the threshold switching based on a thermal runaway in Poole-Frenkel conduction is proposed. Although this approach is often used in physical models, this is the first time it is implemented in a compact model. The model accuracy is validated through a good correlation between simulations and experimental data collected on a PCM cell embedded in a 90nm technology. A wide range of intermediate states is measured and accurately modeled with a single set of parameters, allowing multilevel programing. A good convergence is exhibited even in snapback simulation thanks to this fully continuous approach. Moreover, threshold properties extractions indicate a thermally enhanced switching, which validates the ground hypothesis of the model. Finally, it is shown that this model is compliant with a new drift-resilient cell-state metric. Once enriched with a phase transition module, this compact model is ready to be implemented in circuit simulators.
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