Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD

Rizzoli, R.; Centurioni, E.; Plá, Juan Carlos; Summonte, C.; Migliori, A.; Desalvo, A.; Zignani, F.

doi:10.1016/s0022-3093(01)01088-2

Cited by 21 publications

(7 citation statements)

References 7 publications

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“…Such interface layers have been reported for epitaxial layers grown by lowtemperature MBE, 49 hot-wire CVD, 50 and PECVD. 12,51 We now address the question of why such an interface layer occurs and start by analyzing its composition. SIMS measurements point to an excess of hydrogen and oxygen (Fig.…”

Section: B Interface Layer Of Epitaxial Filmsmentioning

confidence: 99%

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Demaurex¹,

Bartlomé²,

Seif³

et al. 2014

Journal of Applied Physics

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Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

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Section: B Interface Layer Of Epitaxial Filmsmentioning

confidence: 99%

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Demaurex¹,

Bartlomé²,

Seif³

et al. 2014

Journal of Applied Physics

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“…[1][2][3][4] One of the key points in the device performance is the incorporation of thin intrinsic hydrogenated amorphous silicon (a-Si:H) layers on both sides of the crystalline silicon (c-Si) substrate. It has been shown that the quality of these layers affects the external parameters of the device, [5][6][7] therefore, the fabrication process and the properties of the a-Si:H layers have a great impact on the efficiency of the SHJ solar cell.…”

Section: Introductionmentioning

confidence: 99%

Surface passivation of c-Si for silicon heterojunction solar cells using high-pressure hydrogen diluted plasmas

et al. 2015

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In this work we demonstrate excellent c-Si surface passivation by depositing a-Si:H in the high-pressure and high hydrogen dilution regime. By using high hydrogen dilution of the precursor gases during deposition the hydrogen content of the layers is sufficiently increased, while the void fraction is reduced, resulting in dense material. Results show a strong dependence of the lifetime on the substrate temperature and a weaker dependence on the hydrogen dilution. After applying a post-deposition annealing step on the samples equilibration of the lifetime occurs independent of the initial nanostructure.

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“…1) the continuity of the a-Si:H layer is maintained after emitter deposition. As a consequence, the V oc is independent of i-layer thickness, with extremely limited spread, confirming that the passivation properties of such layers [6] are preserved after lc deposition, with no degradation of the film continuity nor plasma-induced crystallization [3]. However, due to the more favorable band discontinuity configuration [7], we obtained much larger V oc values for p/n devices, having m/a structure, if a much thicker a-Si:H layer is used [2,3,6], the more convenient approach being still an open point.…”

Section: Discussionmentioning

confidence: 63%