Silicon heterojunction solar cells with microcrystalline emitter

Summonte, C.; Rizzoli, R.; Iencinella, D.; Centurioni, E.; Desalvo, A.; Zignani, F.

doi:10.1016/j.jnoncrysol.2004.03.059

Cited by 5 publications

(4 citation statements)

References 5 publications

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“…By using a thin intrinsic a-Si:H buffer layer in the heterojunction, a high efficiency (>20%) heterojunction solar cell based on an n-type Czochralski silicon textured absorber was achieved [2][3][4]. However, a similar approach applied to commercial p-type c-Si wafers demonstrated much lower efficiencies, although significant progresses have also been made in this approach [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Diao

et al. 2006

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Diao

et al. 2006

Journal of Non-Crystalline Solids

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“…In micro-scale semiconductors, when d=1 µm and d=50 µm, the E g was regarded as 1.6 and 1.1, [3,6] it can be considered as decreasing proportionally with increasing d from 1 µm to 50 µm. In micro-scaled semiconductor materials, the relation between d and carrier lifetime τ can be expressed as τ= d 2 /4D, [1,7] the absorbing layer thickness D is supposed as 250 µm. Under the same conditions, one can use τ to substitute d and regard as τ being proportionally to the carrier mobility µ n (µ p ).…”

Section: Materials Design Processing and Applicationsmentioning

confidence: 99%

“…Recently, single crystalline and polycrystalline Si solar cells have been widely utilized to generate electricity with high photoelectric conversion efficiency (η) but high fabrication cost, a-Si:H cells with relatively low cost due to large area fabricating under low process temperature (below 400℃) are expected as candidate to replace the aforementioned ones. However, the light induced degradation (as called the S-W effect) in a-Si:H material hasn't been approvingly solved [1]. People hope to select proper material and to improve structure design to obtain good performance solar cells.…”

Section: Introductionmentioning

confidence: 99%

Analysis on micro-/poly-Crystalline SiGe Alloy Solar Cells

Zhang

Wei

Shan

2013

AMR

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Performance of micro-/poly-crystalline SiGe alloy solar cell of TCO/(n)a-Si:H/(i)a-Si/(p) c(pc)-SiGe/(p+)μc-Si/Al structure was analyzed via the AFORS-HET software. Cell structures can be designed to reach up to the optimal performance. Employment of back surface electric field layer of (p+)μc-Si could improve cell properties. The maximum photoelectric conversion efficiency η=21.48% occurs in a cell with average Ge percent content x0.1 and 250 m-thick Si1-xGex alloy light absorption layer, which is higher than the experimental result of the same absorption layer thickness crystalline Si HIT cell [Progress in Photovoltaics: Research and Applications, 8 (2000) 503.]. Temperature dependence of the cell performance parameters (open circuit voltage Voc, circuit current density Jsc, fill factor FF and efficiency η) indicates that Si0.9Ge0.1 cell shows weaker temperature sensitivity than that of pure Si cell. Numerical calculation illustrates that Voc decreases while Jsc, FF and η heighten with raising mean grain sizes and crystalline volume fractions, these variations with the later are more remarkable. Present optimized technique will be benefit to designing and fabricating the high performance solar cell.

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“…1) However, absorption loss in an a-Si:H layer should be reduced to realize higher efficiency. Hydrogenated amorphous silicon (a-Si:H), 2) hydrogenated amorphous silicon carbide (a-SiC:H), 3) hydrogenated microcrystalline silicon (mc-Si:H), [4][5][6] hydrogenated microcrystalline silicon oxide (mc-SiO:H), 7,8) and nanocrystalline cubic silicon carbide (nc-3C-SiC:H) 9,10) have already been applied to HJ c-Si solar cells to form a p-n junction at low temperatures. Among these window layers, n-nc-3C-SiC:H 9) demonstrated the highest spectral response in the short-wavelength region.…”

Section: Introductionmentioning

confidence: 99%

Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells

Sritharathikhun

Jiang

Miyajima

et al. 2009

Jpn. J. Appl. Phys.

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Wide-gap, high-conductivity p-type hydrogenated microcrystalline silicon oxide (p-mc-SiO:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition (60 MHz VHF-PECVD) at a low substrate temperature of approximately [200 C] were used as window layers in n-type crystalline silicon (n-c-Si) heterojunction (HJ) solar cells. We investigated the effect of p-mc-SiO:H window layer thickness on HJ solar cells by changing deposition time and silane (SiH 4 ) flow rate. The effects of carbon dioxide flow rate on the p-mc-SiO:H window and i-a-SiO:H buffer layer were also studied. Employing a p-mc-SiO:H/i-a-SiO:H/n-c-Si [Czochralski (CZ), 200 mm, (100)]/ i-a-Si:H/n-a-Si:H configuration, we achieved an efficiency of 17.8% (active area efficiency) with an open-circuit voltage (V oc ) of 665 mV. The solar cells showed a spectral response of about 0.83 at a wavelength of 400 nm, which is higher than that of conventional HJ solar cells with amorphous silicon window layers.

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Silicon heterojunction solar cells with microcrystalline emitter

Cited by 5 publications

References 5 publications

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Analysis on micro-/poly-Crystalline SiGe Alloy Solar Cells

Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells

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