Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Xu, Ying; Hu, Zhihua; Diao, Hongwei; Cai, Yong; Zhang, Shibin; Zeng, Xiangbo; Hao, Huiying; Liao, Xin; Fortunato, Elvira; Martins, Rodrigo

doi:10.1016/j.jnoncrysol.2006.02.028

Cited by 37 publications

(16 citation statements)

References 15 publications

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“…9 To quench this material bottleneck and owing to their superior electrical and favorable optical properties, hydrogenated nanocrystalline silicon (nc-Si:H) layers have been proposed for carrier-selective-contacts (CSCs) in SHJ solar cells. [10][11][12][13] The material consists of small nanocrystals embedded in the amorphous matrix, 14 giving confirmed anisotropy properties in the growth direction. 15 Furthermore, nc-Si:H alloyed with oxygen (nc-SiO x :H) allows tunable optoelectrical properties, 16,17 with the advantage of simultaneously obtaining higher E g and lower E a, when compared with a-Si:H. This unique feature also enables more flexibility to tailor the selective transport for enhancing solar cells performance.…”

mentioning

confidence: 81%

“…The attempt of reaching higher doping within a‐Si:H films increases defect density, which will deteriorate the effective carrier collection . To quench this material bottleneck and owing to their superior electrical and favorable optical properties, hydrogenated nanocrystalline silicon (nc‐Si:H) layers have been proposed for carrier‐selective‐contacts (CSCs) in SHJ solar cells . The material consists of small nanocrystals embedded in the amorphous matrix, giving confirmed anisotropy properties in the growth direction .…”

Section: Introductionmentioning

confidence: 99%

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Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Zhao

Mazzarella

Procel

et al. 2020

Progress in Photovoltaics

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Hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H) layers exhibit promising optoelectrical properties for carrier‐selective‐contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c‐Si) passivation quality is technologically challenging for growing thin layers (less than 20 nm) on the intrinsic hydrogenated amorphous silicon ((i)a‐Si:H) layer. Here, we present an evaluation of different strategies to improve optoelectrical parameters of SHJ contact stacks founded on highly transparent nc‐SiOx:H layers. Using plasma‐enhanced chemical vapor deposition, we firstly investigate the evolution of optoelectrical parameters by varying the main deposition conditions to achieve layers with refractive index below 2.2 and dark conductivity above 1.00 S/cm. Afterwards, we assess the electrical properties with the application of different surface treatments before and after doped layer deposition. Noticeably, we drastically improve the dark conductivity from 0.79 to 2.03 S/cm and 0.02 to 0.07 S/cm for n‐ and p‐contact, respectively. We observe that interface treatments after (i)a‐Si:H deposition not only induce prompt nucleation of nanocrystals but also improve c‐Si passivation quality. Accordingly, we demonstrate fill factor improvement of 13.5%abs from 65.6% to 79.1% in front/back‐contacted solar cells. We achieve conversion efficiency of 21.8% and 22.0% for front and rear junction configurations, respectively. The optical effectiveness of contact stacks based on nc‐SiOx:H is demonstrated by averagely 1.5 mA/cm2 higher short‐circuit current density thus nearly 1%abs higher cell efficiency as compared with the (n)a‐Si:H.

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mentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Zhao

Mazzarella

Procel

et al. 2020

Progress in Photovoltaics

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“…Tested alternatives to replace the a-Si:H stacks are (microcrystalline) silicon oxides [136,137,182,183] and carbides [148,[184][185][186]. Microcrystalline silicon has a lower but indirect bandgap and features a higher doping efficiency, making it an attractive material for emitter [52,[187][188][189][190] and BSF formation [189,[191][192][193] as well. Of note is that such films may also resolve possible contact problems between TCO-layers and doped films [192,194].…”

Section: Future Directionsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf¹,

Descoeudres²,

Holman³

et al. 2012

Green

108

113

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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“…The low processing temperature (o200 1C) prevents the bulk property degradation of the substrate that is usually observed in high-temperature processes. Further, compared with the conventional diffused solar cells, HIT solar cells have a better temperature coefficient and a higher open-circuit voltage (V OC ) [2][3][4]. For these reasons, HIT solar cells have been extensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation

Zhao

Zhou

et al. 2008

Solar Energy Materials and Solar Cells

115

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Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

Cited by 37 publications

References 15 publications

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

High-efficiency Silicon Heterojunction Solar Cells: A Review

Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation

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