One Single Travelling-Wave MMIC for Highly Linear Broadband Mixers and Variable Gain Amplifiers

Kallfass, Ingmar; Purtova, Tatyana; Brokmeier, A.; Ludwig, W.; Schumacher, Hermann

doi:10.1109/mwsym.2005.1516530

Cited by 9 publications

(6 citation statements)

References 7 publications

(4 reference statements)

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“…Table I summarizes the previous results and this work [8], [9]. This mixer demonstrates broadband performance at a relatively low dc power of 100 mW from 4 to 41 GHz.…”

Section: Circuit Performancementioning

confidence: 56%

A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology

Chang

Lei

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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A broadband singly balanced distributed mixer is developed using a 0.15-m GaAs pHEMT foundry process. It is the first time that the charge-injection approach is applied to a distributed mixer. With the advantage of charge-injection, the mixer achieves a high conversion gain with low dc consumption. The fabricated distributed mixer with an integrated broadband transformer has a compact chip size of 2 mm 1 mm. Measurement results show that the mixer achieves a conversion gain of better than 3.5 dB over a broadband frequency from 4-41 GHz, with a relatively low dc power consumption of 100 mW.

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“…Table I summarizes the previous results and this work [8], [9]. This mixer demonstrates broadband performance at a relatively low dc power of 100 mW from 4 to 41 GHz.…”

Section: Circuit Performancementioning

confidence: 56%

A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology

Chang

Lei

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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“…Based on the model, a traveling-wave MMIC has been designed and fabricated [28] using a power variant of the GaAs pHEMT technology whose active devices have an of 75 GHz. The MMIC has dual functionality: it can serve as ultrabroadband mixer or variable gain amplifier (VGA).…”

Section: Validation In Mmic Performancementioning

confidence: 99%

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Kallfass

Schumacher

Brazil³

2006

IEEE Trans. Microwave Theory Techn.

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Abstract-A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model is dedicated to efficient microwave circuit design and allows for the inclusion of individual dispersion effects, taking into account their respective time constants. The proposed topology allows for small-and large-signal analysis in both the time and frequency domains. Parameter extraction and verification of the model is carried out using pulsed-I-V and dc measurements as well as microwave frequency -parameter characterization of both a GaAs pseudomorphic high electron mobility transistor (pHEMT) and an InP pHEMT technology. Finally, the model is employed in the design and realization of a GaAs pHEMT traveling-wave monolithic microwave integrated circuit. Simulation results are compared to measurements with a focus on figures of merit which are affected by frequency dispersion.Index Terms-Integrated circuit modeling, MODFETs, semiconductor device modeling.

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“…The down‐conversion mixer is a necessary element in the translation of a signal from RF to intermediate frequency (IF) at the front end of the receivers. Several papers have reported passive mixers [3, 4] and active mixers such as distributed mixers [5, 6], and travelling‐wave mixers [7] in GaAs pHEMT technology with good linearity and wideband capability. The conversion gain (CG) of active mixers is positive compared with passive mixers.…”

Section: Introductionmentioning

confidence: 99%

67–80 GHz double‐balanced Gilbert‐cell mixer in 0.1 μm GaAs pHEMT technology

et al. 2016

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A 67-80 GHz double-balanced Gilbert-cell mixer fabricated in 0.1 μm gallium arsenide pseudomorphic high-electron-mobility transistor technology is presented. Two Marchand baluns were placed in RF and local oscillator (LO) input ports to convert single-ended signals to differential signals for wideband use. A differential amplifier between the switch and output stages was used to enhance the conversion gain (CG). The mixer demonstrated an average CG of 14.1 ± 2.1 dB at an LO power of 0 dBm from 67 to 80 GHz. The measured intermediate frequency 3 dB bandwidth was 3 GHz and the input 1 dB compression point was −4.8 dBm.

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One Single Travelling-Wave MMIC for Highly Linear Broadband Mixers and Variable Gain Amplifiers

Cited by 9 publications

References 7 publications

A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology

A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

67–80 GHz double‐balanced Gilbert‐cell mixer in 0.1 μm GaAs pHEMT technology

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