67–80 GHz double‐balanced Gilbert‐cell mixer in 0.1 μm GaAs pHEMT technology

Kao, Hsuan‐Ling; Cho, Cheng-Lin; Tseng, Chi-Lin; Chiu, Hsien‐Chin; Chen, Y.-Y.

doi:10.1049/el.2015.3107

Cited by 6 publications

(5 citation statements)

References 8 publications

(5 reference statements)

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“…Baluns are usually needed to provide balanced signals. Merchand balun has been widely used in Gilbert mixer [2], however, for low-frequency signals, the transmission line will be too large to integrate and active balun is more compatible in this situation [3].…”

Section: Introductionmentioning

confidence: 99%

Low imbalanced fully matched active baluns design for 21GHz upconversion mixer

Wang

2023

International Conference on Electronic Information Engineering and Computer Science (EIECS 2022)

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Low imbalanced and fully matched active baluns have been designed for 21GHz up-conversion Gilbert mixer's ports. It consists of a common-gate FET and a common-source FET with input and output matching networks. The balun has been realized in 0.25μm GaAs pHEMT process. Simulation shows that the phase error of LO balun could be controlled within 2 degrees over the frequency of 3-6GHz, and the phase error of IF balun could be controlled within 3 degrees over the frequency of 16-18GHz.All ports are matched at the impendence of 50Ω for mixer use. The inhibition of the Gilbert mixer using proposed active baluns is more than 40dBc.

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Section: Introductionmentioning

confidence: 99%

Low imbalanced fully matched active baluns design for 21GHz upconversion mixer

Wang

2023

International Conference on Electronic Information Engineering and Computer Science (EIECS 2022)

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“…The two most popular types of doubly balanced mixers (DBMs) are doubly balanced star mixers (DBSMs) and doubly balanced ring mixers (DBRMs). Research on broadband doubly balanced star mixer (DBSM) and doubly balanced ring mixer (DBRM) has been welldeveloped for decades [6,7,8,9,10,11,12,13,14,15,16].…”

Section: Introductionmentioning

confidence: 99%

Design of a 35–95 GHz fundamental monolithic mixer based on a novel IF extraction structure

Lin

Zhang²,

Jia³

et al. 2019

IEICE Electron. Express

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The letter presents a high-performance doubly balanced ring mixer (DBRM) fabricated by a 0.1 µm GaAs pHEMT process that achieves ultrawide radio-frequency (RF) and intermediate frequency (IF) bandwidths. A multiple-coupled-line Marchand balun is optimized to extend the RF bandwidth. A novel structure is designed to directly extract the IF current from the RF balun without an additional IF coupler. Due to the proposed IF extraction structure, the IF bandwidth is broadened with decreased complexity. The size of the whole chip including the probe GSG pads is 0.95×0.65 mm 2 . The measured results show that the conversion loss is 7.2-11.9 dB for the RF frequency range of 35-95 GHz with an LO power level of 14 dBm and a fixed IF frequency of 1 GHz. In addition, the conversion loss is better than 12 dB for the IF frequency range from DC to 30 GHz under a fixed LO frequency. key words: ultrawide bandwidth, doubly balanced ring mixer (DBRM), Marchand balun, monolithic microwave integrated circuit (MMIC) Classification: Microwave and millimeter-wave devices, circuits, and modules

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“…With the development of millimeter‐wave (mm‐wave) frequency band applications, the pseudomorphic high‐electron mobility transistors (pHEMTs) with nanometer gate‐lengths have become a promising solution for mm‐wave power electronics. Numerous nonlinear circuits such as mixers, oscillators, and high‐efficiency power amplifiers (HPA) have been developed using nanometer pHEMT technology in mm‐wave band . In designing these circuits with computer‐aided design (CAD) techniques, accurate large‐signal mm‐wave model of multi‐finger pHEMTs are indispensable to predict the linear and nonlinear performances of the device and reduce the fabrication cost which is significantly high, especially in mm‐wave frequencies.…”

Section: Introductionmentioning

confidence: 99%

“…Numerous nonlinear circuits such as mixers, oscillators, and high-efficiency power amplifiers (HPA) have been developed using nanometer pHEMT technology in mmwave band. [1][2][3] In designing these circuits with computeraided design (CAD) techniques, accurate large-signal mmwave model of multi-finger pHEMTs are indispensable to predict the linear and nonlinear performances of the device and reduce the fabrication cost which is significantly high, especially in mm-wave frequencies. As frequency increases, the dimensions (W) of the electrodes of the transistors become comparable with the wavelength (k g ), especially in nonlinear regime, where harmonic frequencies must be taken into account.…”

Section: Introductionmentioning

confidence: 99%

Large-signal distributed millimeter-wave multifinger pHEMT modeling using time-domain technique

Aliakbari

Abdipour

Mirzavand

et al. 2017

Int J RF Microw Comput Aided Eng

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The finite‐difference time‐domain (FDTD) method is used for the large‐signal modeling of a multifinger pHEMT, which is considered as five nonlinear coupled distributed transmission lines. The developed model, which is based on the exact physical layout of multifinger pHEMT, not only accurately describes the propagation effects along the electrodes at higher frequencies but it also includes major nonlinearities of the I–V and Q–V characteristics. Using the transmission line theory, a proper nonlinear equivalent lumped circuit model is allocated for the differential length of the quintuple‐line transistor and the nonlinear active multiconductor transmission line (NAMCTL) equations are derived. These nonlinear, coupled differential equations are numerically solved using the FDTD method. The proposed model is applied to a 100 nm GaAs pHEMT and the simulation results are compared with the results of conventional sliced model in Keysight ADS simulator. The developed transient nonlinear model accurately predicts both the S‐parameters (1–150 GHz) and large‐signal power performances especially at millimeter wave frequency range. The proposed model can be useful in design and analysis of various types of high‐frequency nonlinear integrated circuits.

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67–80 GHz double‐balanced Gilbert‐cell mixer in 0.1 μm GaAs pHEMT technology

Cited by 6 publications

References 8 publications

Low imbalanced fully matched active baluns design for 21GHz upconversion mixer

Low imbalanced fully matched active baluns design for 21GHz upconversion mixer

Design of a 35–95 GHz fundamental monolithic mixer based on a novel IF extraction structure

Large-signal distributed millimeter-wave multifinger pHEMT modeling using time-domain technique

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