A broadband singly balanced distributed mixer is developed using a 0.15-m GaAs pHEMT foundry process. It is the first time that the charge-injection approach is applied to a distributed mixer. With the advantage of charge-injection, the mixer achieves a high conversion gain with low dc consumption. The fabricated distributed mixer with an integrated broadband transformer has a compact chip size of 2 mm 1 mm. Measurement results show that the mixer achieves a conversion gain of better than 3.5 dB over a broadband frequency from 4-41 GHz, with a relatively low dc power consumption of 100 mW.
A miniature power amplifier, which combines two conventional distributed amplifiers and a single transistor amplifier is designed to achieve wide bandwidth, high gain and moderate output power from 15 to 50 GHz. This circuit was fabricated using 0.15-μm GaAs based pHEMT MMIC technology. The measured small signal gain is 21±1.5dB from 15 to 50 GHz, and the output saturated power is 18-22 dBm from 18 to 50 GHz with a miniature size of 1.5 x 1 mm2.
Index Terms -Broadband, Power amplifier, MonolithicIntegrated circuit (MMIC).
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