On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

Stiebel, D.; Pichler, P.; Ryssel, H.

doi:10.1557/proc-568-141

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…A notable body of simulation work in order to model these effects exists [4][5][6][7][8][9], which all are based on the clustering energetics of the BICs. Two different approaches have been chosen to determine these energetics: First, an inverse-modeling fit of the BIC energies to a large set of secondary-ion mass spectroscopy (SIMS) measurements [8].…”

Section: Introductionmentioning

confidence: 99%

“…Very recently, revised energetics from a new study which has been performed in parallel to our work have been published by the same group [9,14], after indications had been found that the previous numbers could not explain all experiments: In Ref. [7], several of the cluster energies of Ref. [18] had to be re-fitted in order to predict annealing experiments correctly.…”

Section: Introductionmentioning

confidence: 99%

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First-Principles Modeling of Boron Clustering in Silicon

Windl

Masquelier

2001

phys. stat. sol. (b)

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We present results of ab initio calculations for the structure and energetics of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the clusters and their possible relationship to boron precipitates and interstitial-cluster formation are discussed. Our continuum model suggests that inclusion of the fractional activation of charged clusters into the overall carrier count can make a substantial difference, if a sample contains a large fraction of B clustered in B 3 I À clusters, which might present a way to probe these clusters experimentally.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First-Principles Modeling of Boron Clustering in Silicon

Windl

Masquelier

2001

phys. stat. sol. (b)

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Ab initio modeling of boron clustering in silicon

Windl

Masquelier

2000

Applied Physics Letters

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We present results of ab initio calculations for the structure and energetics of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the clusters and their possible relationship to boron precipitates and interstitial-cluster formation are discussed. We find that neither the local-density approximation nor the generalized-gradient approximation to the density-functional theory result in energetics that predict annealing and activation experiments perfectly well. However, gentle refitting of the numbers results in a model with good predictive qualities.

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Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation

Ngau

Griffin

Plummer

2001

Journal of Applied Physics

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Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank–Turnbull reactions. This study of boron TED reduction in Si1−x−yGexCy during 750 °C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {311} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank–Turnbull reaction, and a carbon interstitial-carbon substitutional (CiCs) pairing reaction that successfully simulates carbon suppression of boron TED at 750 °C for anneal times ranging from 10 s to 60 min.

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On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

Cited by 4 publications

References 10 publications

First-Principles Modeling of Boron Clustering in Silicon

First-Principles Modeling of Boron Clustering in Silicon

Ab initio modeling of boron clustering in silicon

Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation

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