To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate model for the interaction of self–interstitials with extended defects is indispensable. Recently, such a model has been published by Cowern including the formation of {113} defects via small self–interstitial clusters. Extracted from experimental results, this continuum model consists of a large set of coupled differential equations and, consequently, simulation times are rather high. In this letter, we present a model based on only seven differential equations leading to almost identical results in comparison to those of the original model. The reduction obtained will allow the application of the clustering model for the simulation of TED in commercial software tools.
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the absence of {311}-defects. Under these conditions, TED is mainly determined by the formation of boron-interstitial complexes (BIC). In addition, effects from the proximity of the surface become more and more important. Insight into the behavior of the dopant atoms is obtained by the comparison with simulations.
Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simu-lation of such phenomena with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron interstitial clusters
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