A reduced approach for modeling the influence of nanoclusters and {113} defects on transient enhanced diffusion

Stiebel, D.; Pichler, P.; Cowern, N.E.B.

doi:10.1063/1.1406147

Cited by 13 publications

(8 citation statements)

References 7 publications

(10 reference statements)

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“…According to Zechner et al [1], only three equations representing three cluster sizes (I 2 , I 3 , I 4 ) [4] of different binding energies are needed to simulate the regime of small interstitial clusters. The time evolution of the {311} defects is described by two equations or "moments" [5], one for the interstitial concentration trapped in {311} defects (C 311 ) and one for the density of {311} defects (D 311 ).…”

Section: Theorymentioning

confidence: 99%

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Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

2007

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The simulation of deep-submicron silicon-device manufacturing processes relies on predictive models for extended defect clusters. For submicroscopic interstitial clusters and {311} defects, an efficient and highly accurate model for process simulation has been developed and calibrated recently [1]. This model combines equations for three small interstitial clusters and two moments for {311} defects. In this work, we extend this model to include dislocation loops and to reproduce a greatly increased range of experimental data, including thermal annealing of end-of-range defects after amorphizing implants.

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Section: Theorymentioning

confidence: 99%

“…The time evolution of the {311} defects is described by two equations or "moments" [5], one for the interstitial concentration trapped in {311} defects (C 311 ) and one for the density of {311} defects (D 311 ). The concentration C 311 increases through the capture of free interstitials I by the small cluster type I 4 …”

Section: Theorymentioning

confidence: 99%

Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

2007

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“…Self‐interstitial complexes in silicon are of great importance in Si‐based implanted devices as they are responsible for the diffusion enhancement and numerous defect reactions . However, the available solid experimental data on the structure and properties of self‐interstitial clusters (I n ) are very limited.…”

Section: Introductionmentioning

confidence: 99%

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Gusakov

Ластовский

Мурин

et al. 2017

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.New experimental and theoretical results on the silicon diinterstitial (I 2 ) and its interactions with oxygen and carbon impurity atoms in Si crystals are reported. Electronic structure calculations indicate that I 2 has an acceptor and a donor level in the gap, which are close to the conduction and the valence band edges, respectively. Experimental results, which support the theoretically predicted high mobility of I 2 , are discussed. It is argued that mobile I 2 can be trapped by oxygen and carbon impurities. The I 2 O center has a donor level at E v þ0.09 eV. Two absorption bands at 936 and 929 cm À1 are assigned to the local vibrational modes of the I 2 O defect in the neutral and positively charged states, respectively. The binding energy of I 2 O relative to the separated I 2 and O i species is 0.22 eV. The disappearance of the I 2 O complex upon thermal annealing occurs in the temperature range 50-100 8C and is accompanied by the introduction of another defect, which gives rise to two hole emission signals from energy levels at E v þ0.54 and E v þ0.45 eV. It is argued that these levels are related to a complex consisting of interstitial carbon and interstitial silicon atoms (C i I). The stable configurations of the C i I pair have been found.

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“…An additional substrate mechanism is thought to be involved, similar to the boron clustering effects known to occur in silicon. [45][46][47] …”

Section: Fed Model Predictions and Comparison With Experimental Resultsmentioning

confidence: 99%

Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide

Phelps

Chester

Johnson

et al. 2003

Journal of Applied Physics

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Articles you may be interested inA methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxidesemiconductor field-effect transistors Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions A field enhanced diffusion ͑FED͒ model is proposed for the observed phenomenon of dopant migration within 4H silicon carbide ͑4H-SiC͒ during high temperature annealing. The proposed FED model is based on the combined effects of both dopant diffusion and the in-built p -n junction electric field gradients found within the doped substrate resulting from the presence of the substrate dopants. Measured as-implanted dopant concentration profile data prior to high temperature annealing are utilized as input data for the proposed FED model. The resultant FED profile predictions of the proposed model during annealing are shown to be in excellent agreement with experimental findings. Parameters are extracted using the FED model simulation for the high temperature ionic diffusivity and ionic field mobility for nitrogen dopant in boron co-doped 4H-SiC. The extracted values for the ionic diffusivity and the ionic mobility of the nitrogen donor in boron co-doped 4H-SiC found using the model are 7.2ϫ10 Ϫ15 cm 2 s Ϫ1 and 1.6ϫ10 Ϫ13 cm 2 V Ϫ1 s Ϫ1 , respectively.

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A reduced approach for modeling the influence of nanoclusters and {113} defects on transient enhanced diffusion

Cited by 13 publications

References 7 publications

Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide

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