Atmospheric pressure wet oxidations at ϳ785°C were performed on ͑100͒, ͑110͒, and ͑111͒ oriented silicon wafers. The experimental data revealed that the ͑110͒ plane experiences rapid initial oxide growth of the same order of magnitude as that which is known to occur during dry oxidation of all orientations of Si. The data also indicated that a crossover in the oxidation rates of the ͑110͒ and ͑111͒ surfaces occurs similar to that which has been reported for oxidation in dry ambients. Initially, the ͑110͒ orientation oxidizes fastest yielding the oxidation rate order (110) Ͼ (111) Ͼ (100). As the growth proceeds, however, the oxidation rate of the ͑111͒ plane surpasses that of the ͑110͒ plane resulting in the order ( 111) Ͼ (110) Ͼ (100). These two anomalous characteristics of silicon oxidation have previously been believed to be limited to dry oxidation. The discovery that rapid initial oxide growth also occurs during wet oxidation of ͑110͒ oriented Si reveals that the understanding of these anomalous oxidation kinetics must encompass both wet and dry oxidants and the strong dependence of the phenomena on the structure of the Si crystal surface.
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank–Turnbull reactions. This study of boron TED reduction in Si1−x−yGexCy during 750 °C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {311} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank–Turnbull reaction, and a carbon interstitial-carbon substitutional (CiCs) pairing reaction that successfully simulates carbon suppression of boron TED at 750 °C for anneal times ranging from 10 s to 60 min.
In this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.
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