On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Onsia, B.; Caymax, Matty; Conard, Thierry; Gendt, Stefan De; Smedt, Florimond De; Delabie, Annelies; Gottschalk, Christiane; Heyns, Marc; Green, M.; Lin, Shen; Mertens, Paul; Tsai, Wu‐ting; Vinckier, Chris

doi:10.4028/www.scientific.net/ssp.103-104.19

Cited by 51 publications

(28 citation statements)

References 7 publications

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“…[21] reducing the density of defects at the interface. It is worth to mention that this proposed reaction is consistent with prior experiments on high-k oxides on Ge substrates [10], [23], and that the existence of GeO x in HF cleaned substrates prior FGA, has been widely documented in the literature [30], [49], [50].…”

Section: Discussionsupporting

confidence: 87%

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Aguirre

Pazos

Palumbo

et al. 2018

Journal of Applied Physics

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Gate) has been analyzed in terms of the C-V hysteresis and flat band voltage as function of both negative and positive stress fields. Significant differences were found for the case of negative voltage stress between the annealed and non-annealed samples, independently of the stressing time. It was found that the hole trapping effect decreases in the case of the forming gas annealed samples, indicating strong passivation of defects with energies close to the valence band existing in the oxidesemiconductor interface during the forming gas annealing. Finally, a comparison between the degradation dynamics of Germanium and III-V (n-InGaAs) MOS stacks is presented to summarize the main challenges in the integration of reliable Ge -III-V hybrid devices.

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Section: Discussionsupporting

confidence: 87%

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Aguirre

Pazos

Palumbo

et al. 2018

Journal of Applied Physics

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“…For Ag experiments, Ag film (∼300 nm thick) was thermally evaporated (Denton Explorer) onto a piece of Si wafer substrate using Ag source material (99.99% purity). For Ge experiments, Czochralski-grown, undoped, <100> Ge single crystals (MTI Corp.) were cleaned with deionized water to dissolve the surface oxide and then transferred to the glove box and attached to the sample holder.…”

Section: Experimental Methodsmentioning

confidence: 99%

In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS₂ Interfaces

Kondekar

Boebinger

Woods

et al. 2017

ACS Appl. Mater. Interfaces

162

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Nanoscale transition-metal dichalcogenide (TMDC) materials, such as MoS, exhibit promising behavior in next-generation electronics and energy-storage devices. TMDCs have a highly anisotropic crystal structure, with edge sites and basal planes exhibiting different structural, chemical, and electronic properties. In virtually all applications, two-dimensional or bulk TMDCs must be interfaced with other materials (such as electrical contacts in a transistor). The presence of edge sites vs basal planes (i.e., the crystallographic orientation of the TMDC) could influence the chemical and electronic properties of these solid-state interfaces, but such effects are not well understood. Here, we use in situ X-ray photoelectron spectroscopy (XPS) to investigate how the crystallography and structure of MoS influence chemical transformations at solid-state interfaces with various other materials. MoS materials with controllably aligned crystal structures (horizontal vs vertical orientation of basal planes) were fabricated, and in situ XPS was carried out by sputter-depositing three different materials (Li, Ge, and Ag) onto MoS within an XPS instrument while periodically collecting photoelectron spectra; these deposited materials are of interest due to their application in electronic devices or energy storage. The results showed that Li reacts readily with both crystallographic orientations of MoS to form metallic Mo and LiS, while Ag showed very little chemical or electronic interaction with either type of MoS. In contrast, Ge showed significant chemical interactions with MoS basal planes, but only minor chemical changes were observed when Ge contacted MoS edge sites. These findings have implications for electronic transport and band alignment at these interfaces, which is of significant interest for a variety of applications.

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“…Since both samples went through the DHF treatment, most native oxides were removed and the sample surface becomes H-terminated. As a result, the Ge 0.83 Sn 0.17 sample surface has Ge-H, Sn-H bonds, and possibly Ge-O and Sn-O bonds due to the incomplete surface oxide removal in DHF[49]. After sulfur passivation, Ge-H bond (bond energy: 263 kJ/mol[50]) and Sn-H bond (bond energy: 264 kJ/mol) are replaced by more stable Ge-S bond (bond energy: 534 kJ/ mol) and Sn-S bond (bond energy: 467 kJ/mol), respectively.…”

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confidence: 99%

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Lei

Wang

Zhang

et al. 2016

Journal of Applied Physics

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The effect of sulfur passivation of the surface of Ge 0.83 Sn 0.17 is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the interfacial property between HfO 2 and Ge 0.83 Sn 0.17 . Sulfur passivation is effective in reducing both the Ge oxides and Sn oxides formation and the Sn atoms segregation. In addition, sulfur passivation reduces the interface trap density D it at the HfO 2 /Ge 0.83 Sn 0.17 interface from the valence band edge to the midgap. After the implementation of sulfur passivation, Ge 0.83 Sn 0.17 p-MOSFETs show improved subthreshold swing S and effective hole mobility μ eff . 25% μ eff enhancement can be observed in Ge 0.83 Sn 0.17 p-MOSFETs with sulfur passivation at a high inversion carrier density N inv of 1 × 10 13 cm −2 .

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On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Cited by 51 publications

References 7 publications

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS₂ Interfaces

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

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On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Cited by 51 publications

References 7 publications

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks

In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS2 Interfaces

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

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In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS₂ Interfaces