Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

Sharma, Yogesh; Pavunny, Shojan P.; Fachini, E.; Scott, J. F.; Katiyar, Ram S.

doi:10.1063/1.4930039

Cited by 19 publications

(5 citation statements)

References 39 publications

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“…We have also measured the temperature-dependent resistance variation of the ReRAM device; the results showed that the resistance increases upon increasing the measuring temperature in the LRS (not shown here), which proves that the filament is really composed of metal ions. The same results are also reported in literature [ 18 , 19 , 20 ].…”

Section: Resultssupporting

confidence: 91%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

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Section: Resultssupporting

confidence: 91%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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“…In the case where the mean free path of the electrons is less than the Schottky barrier width, Simmons' modified Schottky equation (Equation (2)) is more appropriated [72,73].…”

Section: Schottky Emissionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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“…There are many kinds of memory devices based on different mechanisms and materials that are highly likely to replace non-volatile memory, such as resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), and phase change memory (PCM) [1][2][3][4][5][6]. Among these new types of memory, resistive switching (RS) memory has been widely studied due to such advantages as its simple preparation process, low energy consumption, predominant memory density, small size, and good compatibility with the conventional CMOS process [7,8]. The ReRAM memory device is a novel non-volatile memory based on the principle of resistance change of thin film materials [9,10].…”

Section: Introductionmentioning

confidence: 99%

Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

Tang

Jiang

et al. 2019

Journal of Asian Ceramic Societies

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Amorphous SrTiO 3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO 3 /FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (R off /R on) of 10 2. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO 3 thin films. Ohmic conduction dominated in the initial high-and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO 3 films have potential resistive memory applications.

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Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

Cited by 19 publications

References 39 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

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Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

Cited by 19 publications

References 39 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Bipolar resistive switching characteristics of amorphous SrTiO3thin films prepared by the sol-gel process

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Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process