Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Lim, Ee Wah; Ismail, Razali

doi:10.3390/electronics4030586

Cited by 585 publications

(442 citation statements)

References 112 publications

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“…As it is known that linearity in the behavior of ln (I) or ln(I/V) as a function of √V governs Schottky or Poole-Frenkel emission, respectively yielding positive gradients as under:49…”

Section: Resultsmentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

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Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

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“…As it is known that linearity in the behavior of ln (I) or ln(I/V) as a function of √V governs Schottky or Poole-Frenkel emission, respectively yielding positive gradients as under:49…”

Section: Resultsmentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

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show abstract

“…This nonlinearity can be attributed to Schottky emission model, which follows a linear relation between ln (I) and V 1/2 as plotted in the inset of Figure 6a. 11,16,37 The metallic conduction behavior in the LRS is further investigated using a temperature-dependent model described as follows:…”

Section: Resultsmentioning

confidence: 99%

Polymer-Assisted Solution Processing of TiO₂Thin Films for Resistive-Switching Random Access Memory

Vishwanath

Jeon

Kim

2016

J. Electrochem. Soc.

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In this study, we present a polymer-assisted solution (PAS) process to prepare TiO 2 electrolyte layers for resistive-switching random access memory (ReRAM). The PAS process utilizes the stability of metal-polymer complexes in the coating solution to form uniform and dense films. In addition, the viscosity of the PAS coating solution can easily be adapted for any currently used coating technique. The electrochemical-metallization-based (ECM-based) ReRAM devices were prepared by spin-coating the PAS coating solution on an indium tin oxide (ITO) glass substrate that is used as the bottom electrode. Cu was deposited on the PAS-TiO 2 electrolyte as an electrochemically active metal electrode used as the top electrode. The ECM-based ReRAM with the PAS-TiO 2 electrolyte layer demonstrated bipolar resistive-switching behavior with a memory window wider than 13, cycle endurance over 500 cycles, and retention time longer than 10 4 s. Analysis of the conduction mechanism in high and low resistive states indicates that the resistive switching is attributed to the formation and rupture of Cu conducting filaments (CFs) in the PAS-TiO 2 electrolyte layer. New nonvolatile memory devices with various material characteristics based on ferroelectric polarization, magnetic polarization, and material phase change have been investigated to overcome the scalability issue of modern flash memory devices.1-3 However, recent research efforts have focused on resistive-switching random access memory (ReRAM), also known as conductive-bridge random access memory (CBRAM) or electrochemical-metallization-based (ECMbased) ReRAM, due to its outstanding advantages including a simple structure, low switching power consumption, fast switching speed, and capability of both unipolar and bipolar switching modes.4-6 ECMbased ReRAM consists of a solid electrolyte thin film in between two electrodes, an electrochemically active metal (EAM) electrode such as Ag or Cu and an electrochemically inert metal (EIM) electrode such as Pt, Au, or W. The EAM, biased with a sufficiently positive-polarity voltage with respect to the counter electrode (EIM), is electrochemically dissolved and migrates through the solid electrolyte toward the EIM electrode. Consequently, a conducting bridge forms between the two electrodes, which is also known as a conducting filament (CF). The resistive switching in the ECM-based ReRAM relies on the formation (SET) and rupture (RESET) of the CFs in the solid electrolyte, which depend on the polarity of the applied voltage. 7,8 Various solid electrolyte materials such as perovskites, chalcogenides and metal oxides have been explored for the fabrication of ReRAM.9-21 Most solid electrolyte films have been deposited using vacuum based processes such as thermal oxidation, atomic layer deposition, pulsed laser deposition, sputtering, and thermal evaporation. 15,19,[22][23][24] There are also other efforts devoted to growing metal oxide films as the solid electrolyte layers using chemical solution deposition such as sol-gel process. 25,26 H...

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“…After that, several physical memristor devices suggested the use of different materials and production methods. Most metal-oxide semiconductors exhibit memristor characteristics, including TiO 2 , ZnO, HfO 2 , VO 2 , TaO x , and so on [13,15,16]. There are two types of contact in semiconductor: one is of Schottky (rectifying), and the other one is ohmic.…”

Section: Active Layer Materials and Top/bottom Electrodementioning

confidence: 99%

Emulator Circuits and Resistive Switching Parameters of Memristor

Yeşil¹,

Gül²,

Babacan³

2018

Memristor and Memristive Neural Networks

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Cited by 585 publications

References 112 publications

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Polymer-Assisted Solution Processing of TiO₂Thin Films for Resistive-Switching Random Access Memory

Emulator Circuits and Resistive Switching Parameters of Memristor

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Cited by 585 publications

References 112 publications

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Polymer-Assisted Solution Processing of TiO2Thin Films for Resistive-Switching Random Access Memory

Emulator Circuits and Resistive Switching Parameters of Memristor

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Resources

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Polymer-Assisted Solution Processing of TiO₂Thin Films for Resistive-Switching Random Access Memory