Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M.

doi:10.1038/srep39539

Cited by 90 publications

(59 citation statements)

References 58 publications

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“…The barrier height (φ) is the difference between the work function of the metal (ψ) and the electron affinity of the insulator (χ). The electron affinity of Al 2 O 3 fabricated by PEALD has been reported as 1.90 ± 0.2 eV and the work function of Pt and Al are ≈5.69 and 4.28 eV, respectively. Therefore, the left barrier height at the Pt–Al 2 O 3 interface is expected to be approximately φ L = 3.79 eV, and the right barrier height at the Al–Al 2 O 3 interface is expected to be approximately φ R = 2.38 eV.…”

Section: Resultsmentioning

confidence: 99%

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

Alshehri

Mistry

Nguyễn

et al. 2018

Adv Funct Materials

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A quantum-tunneling metal-insulator-metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP-CVD) for the first time. This scalable method is used to produce MIM diodes with high-quality, pinhole-free Al 2 O 3 films more rapidly than by conventional vacuum-based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum-enabled devices. In fact, the MIM diodes fabricated by AP-CVD show a lower effective barrier height (2.20 eV) at the electrodeinsulator interface than those fabricated by conventional plasma-enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero-bias resistance, and better asymmetry of 107.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201805533. dielectric layer sandwiched between two metal contacts. MIM diodes are capable of rectification in the high frequency range due to a femtosecond quantum-tunneling electron transport mechanism through the insulator, making them attractive for applications in solar rectennas, [1] infrared detectors, [2,3] and wireless power transmission. [4] However, the insulator layer in the MIM stack, which plays a crucial role in determining the diode performance, [5] is typically deposited using vacuum-based methods, such as sputtering, [6] anodic oxidation of sputtered films, [7] electron beam deposition, [8] and especially atomic layer deposition (ALD), [9] which is commonly used due to its ability to deposit nanoscale films with high accuracy and uniformity. High-throughput fabrication of MIM diodes is limited by slow deposition rates and the need for a vacuum environment. Scalable techniques are therefore needed for depositing nanoscale films for the next generation of integrated quantum devices. Some deposition processes have been introduced to fabricate thin films at atmospheric pressure for nanoelectronic devices that utilize quantum phenomena. Thermal and anodic oxidation, for example, have been used to grow thin CrO x and Nb 2 O 5 films on Cr and Nb layers for MIM diodes [7,10] ; atmospheric pressure metal organic vapor phase epitaxial growth (AP-MOVPE), or atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD), has been used to fabricate InGaAsP multiquantum-well structures for optical devices [11] ; the Langmuir Blodgett technique was used to deposit a ZnO film for a MIM diode [12] ; and a chemical vapor deposition (CVD) furnace operated at atmospheric pressure has been used to deposit a TiO 2 film in a tunneling transistor. [13] The need for high temperatures, specific metal films for oxidation, and complex compound precursors in these techniques, as well as challenges in reproducibility, highlight the need for new methods to reliably deposit enabling films for cost-effective quantum devices. Recently, atmospheric pressure spatial atomic layer deposition (AP-SALD) systems have been utilized to grow uniform films for different applications including solar cells...

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Section: Resultsmentioning

confidence: 99%

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

Alshehri

Mistry

Nguyễn

et al. 2018

Adv Funct Materials

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“…2(f) presents the retention test results of the a-SVO memristor for different resistance states measured at room temperature. Individual states were monitored at a read voltage of +0.1 V every 2 s, and no significant changes were observed for a period of 2 × 10 4 s. This is because the atomic migration of a conductive filament due to Joule heating rarely occurs under voltage stress 50 . These results indicate that the a-SVO memristor satisfies the requirements for use in potential synapse devices.…”

Section: Resultsmentioning

confidence: 99%

Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing

Lee

Kim

Seong

2020

Sci Rep

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The development of brain-inspired neuromorphic computing, including artificial intelligence (AI) and machine learning, is of considerable importance because of the rapid growth in hardware and software capacities, which allows for the efficient handling of big data. Devices for neuromorphic computing must satisfy basic requirements such as multilevel states, high operating speeds, low energy consumption, and sufficient endurance, retention and linearity. In this study, inorganic perovskite-type amorphous strontium vanadate (a-SrVO x : a-SVO) synthesized at room temperature is utilized to produce a high-performance memristor that demonstrates nonvolatile multilevel resistive switching and synaptic characteristics. Analysis of the electrical characteristics indicates that the a-SVO memristor illustrates typical bipolar resistive switching behavior. Multilevel resistance states are also observed in the off-to-on and on-to-off transition processes. The retention resistance of the a-SVO memristor is shown to not significantly change for a period of 2 × 10 4 s. The conduction mechanism operating within the Ag/a-SVO/Pt memristor is ascribed to the formation of Ag-based filaments. Nonlinear neural network simulations are also conducted to evaluate the synaptic behavior. These results demonstrate that a-SVo-based memristors hold great promise for use in high-performance neuromorphic computing devices. open Scientific RepoRtS | (2020) 10:5761 | https://doi.

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“…For the HRS current of the PECVD-SiN x devices presented in Fig. 3(a), the current conduction resembles Poole-Frenkel (P-F) emission 19,20,[29][30][31][32] :…”

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confidence: 99%

High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence

Yen

Chin

Gritsenko

2020

Sci Rep

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All-nonmetal resistive random access memory (RRAM) with a n + -Si/Sin x /p + -Si structure was investigated in this study. the device performance of Sin x developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (pecVD). the Sin x RRAM device developed using pVD has a large resistance window that is larger than 10 4 and exhibits good endurance to 10 5 cycles under switching pulses of 1 μs and a retention time of 10 4 s at 85 °C. Moreover, the SiN x RRAM device developed using pVD had tighter device-todevice distribution of set and reset voltages than those developed using pecVD. Such tight distribution is crucial to realise a large-size cross-point array and integrate with complementary metal-oxidesemiconductor technology to realise electronic neurons. the high performance of the Sin x RRAM device developed using pVD is attributed to the abundant defects in the pVD dielectric that was supported by the analysed conduction mechanisms obtained from the measured current-voltage characteristics.Resistive random access memory (RRAM) 1-26 has attracted considerable attention over the past two decades due to its simple structure, nonvolatility, high scalability, rapid switching speed, and relatively low operating power. These advantages make RRAM devices suitable for use in future artificial intelligence and neuromorphic computing applications 1-4 . A variety of binary composite materials, such as HfO x , TaO x , TiO x , SiO x , and GeO x , that exhibit different device properties have been used as the switching layer. Although various conduction mechanisms for RRAMs have been proposed, the carrier transport behaviour of RRAMs still has not been completely confirmed. To prevent the metal ions from contributing to transport behaviour, we pioneered nonmetal GeO x dielectric RRAM devices 6-10 and all-nonmetal N + -Si/SiO x /P + -Si RRAM devices 11 . In this study, we investigated the all-nonmetal SiN x RRAM devices in which the bond enthalpy of SiN is lower than that of SiO 27 . The SiN x material has been widely used in the semiconductor industry for various applications, such as the passivation layer of an integrated circuit and the charge-trapping layer of a flash memory. This material can be easily integrated into complementary metal-oxide-semiconductor (CMOS) technology. Moreover, the RRAM device performance strongly depends on the SiN x formation process. A high-performance RRAM device with a large memory window, good endurance, long retention time, and tight device-to-device distribution of the set-reset voltages V set -V reset is only achievable when the SiN x layers are formed using low-temperature physical vapor deposition (PVD) rather than the standard plasma-enhanced chemical vapor deposition (PECVD). The high-performance SiN x RRAM device developed using PVD (PVD-SiN x RRAM device) is linked to the high number of defects and high amount of defect-related current conduction in the SiN x dielectric.

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Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Cited by 90 publications

References 58 publications

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing

High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence

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