Multilevel resistive switching was observed in random access memory device using amorphous SmGdO3 (SGO) ternary oxide thin films. Non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed by varying compliance current which was attributed to compliance current dependent variation in size of conducting filaments. As fabricated Pt/SGO/Pt devices exhibited excellent switching parameters such as stable resistance ratios of reset (ON) to set (OFF) states, non-overlapping switching voltages, excellent data retention, and endurance. Temperature dependent variation of resistances of ON and OFF states of the device was studied to elucidate current conduction and resistive switching mechanisms.

Delafossite p-type CuFeO2 (CFO) semiconductors were synthesized by a modified solid state reaction technique and investigated by x-ray diffraction, x-ray photoemission spectroscopy (XPS), energy dispersive x-ray spectroscopy, and scanning electron microscopy, revealing the single-phase nature of CFO with 1:1 Cu/Fe atomic ratio. The valance states of CFO were examined by XPS and suggest Cu and Fe ions are in +1 and +3 valance states with high spin S=5/2. The “turn-on field” which is the macroscopic field needed to get an emission current of 9 nA, was calculated as 5.72 V/μm. Room temperature Raman spectra of CFO displayed two main Raman active modes at Eg∼351 cm−1 and Ag∼692 cm−1 in accord with other delafossite structures. Temperature dependent Raman spectra showed that both the modes shifted to lower frequency with significant decrease in intensity with increase in temperature. Frequency shift and linewidth of both phonon lines matched well with the theoretical damped harmonic oscillator model based on thermal expansion of the lattice and their anharmonicity coupling with other phonons.

The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, X-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the structure of both Ca-and Mg-intercalated epitaxial graphene on SiC(0001). We find that in contrast to previous studies, Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds and 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). This situation is similar with the Mg-intercalation of epitaxial graphene on SiC(0001), in which an ordered Mg-terminated reconstruction at the SiC surface is formed, resulting in Mgintercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). We find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable.

BiFeO 3 (BFO), BiFe1−xTixO3, and BiFe0.9Ti0.05Co0.05O3 thin films were deposited on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. BFO film has distorted rhombohedral R3c structure and in BiFe1−xTixO3 (104)/(110) reflections broadened suggesting limited grain growth with Ti substitution. The surface roughness (rms) decreased in the case of Ti substituted BFO. Up to 5% Ti in the lattice reduces the leakage current substantially. For BiFe1−xTixO3, the leakage current qualitatively followed the same trend and the behavior resembles to space charge limited current conduction. The magnetic properties were completely lost by Ti substitution and slightly recovered upon cosubstitution with magnetically active Co. The disappearance of ferromagnetic hysteresis of BFO with Ti substitution and its reappearance with Co is suggestive of the origin of magnetic properties consequential from the BFO lattice itself and hence support it as an intrinsic property of BFO. Capacitance-voltage characteristics of BFO, BiFe0.95Ti0.05O3, and BiFe0.9Ti0.05Co0.05O3 showed butterfly loop indicating ferroelectric property at room temperature as well as at low temperature. However, saturated polarization-voltage hysteresis was not observed in all cases and BiFe0.9Ti0.05Co0.05O3 films showed very poor ferroelectricity compared to BFO and BiFe0.95Ti0.05O3.

We describe systematic studies on Nd and Mn co-doped BiFeO 3 , i.e., (Bi 0.95 Nd 0.05 ) (Fe 0.97 Mn 0.03 )O 3 (BNFM) polycrystalline electroceramics. Raman spectra and X-ray diffraction patterns revealed the formation of rhombohedral crystal structure at room temperature, and ruled out structural changes in BiFeO 3 (BFO) after low percentage chemical substitution. Strong dielectric dispersion and a sharp anomaly around 620 K observed near the Neel temperature (T N $ 643 K of BFO) support strong magneto-dielectric coupling, verified by the exothermic peak in differential thermal data. Impedance spectroscopy disclosed the appearance of grain boundary contributions in the dielectric data in the region, and their disappearance just near the Neel temperature suggests magnetically active grain boundaries. The resistive grain boundary components of the BNFM are mainly responsible for magneto-dielectric coupling. Capacitive grain boundaries are not observed in the modulus spectra and the dielectric behavior deviates from the ideal Debye-type. The ac conduction studies illustrate short-range order with ionic translations assisted by both large and small polaron hopping. Magnetic studies indicate that the weak antiferromagnetic phase of BNFM ceramics is dominated by a strong paramagnetic response (unsaturated magnetization even at applied magnetic field of 7 T). The bulk BNFM sample shows a good in-plane magnetoelectric coupling (ME) coefficient. V C 2015 AIP Publishing LLC. [http://dx