Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

Abstract

Amorphous SrTiO 3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO 3 /FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (R off /R on) of 10 2. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO 3 thin films. Ohmic conduction dominated in the initial high-and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO 3 films have potential resistive memory applications.

Bipolar resistive switching of Pt/Ga2O3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

“…Some typical RS with different structures is compared below in table 1. As can been seen, BRS of Pt/Ga 2 O 3−x /SiC/Pt structures has a higher Off/On resistance ratio than other structures, which is comparable with Pt/LaFeO 3 -PbTiO 3 /Nb-SrTiO 3 /Pt structures [8][9][10][11][12][13][14].…”

“…bipolar and unipolar. The bipolar RS (BRS) changes the resistance from the HRS to LRS and vice versa at opposite voltage polarities, while the unipolar RS (URS) does not depend on the polarity of the voltage [8][9][10][11][12][13][14][15][16]. These two types of switching have their own advantages.…”

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi12FeO20 Ideal Sillenite

“…More interestingly, NDR current is lowered from 6 to 1.2 mA, yet the NDR characteristics are present in all these cycles. The Weibull cumulative distribution function, ln {Àln[1Àf(x)]} = β ln V where V is set/reset voltage and β is shape parameter, [40,41] is computed to understand the statistical distribution for set and reset voltages across multiple cycles in RRAM and is shown in Figure 3a for V set and V reset statistical distribution of Cu/Bi 12 FeO 20 /FTO device. The shape parameters, estimated from the slope of the Weibull distribution, are %À13.06 and 21.01, for reset and set states, respectively.…”

Perovskite material-based memristors for applications in information processing and artificial intelligence

“…79 In 2019, Tang et al prepared amorphous SrTiO 3 films on a tin fluoride oxide (FTO) substrate using sol–gel and coating methods to prepare a memristive device. 73 That device with an Au/SrTiO 3 /FTO structure showed a high switching ratio of 10 2 and prominent durability.…”

“…Various methods have been used for the preparation of perovskite-type compounds, including the traditional solution method, magnetron sputtering, sol–gel process, 71–73 hydrothermal synthesis, 74,75 and high-energy ball milling. 76 Previously, a memristor based on zinc titanium oxide (ZnTiO 3 ) was prepared using solution combustion synthesis described by Akhilesh et al 77 In this work, a device with an Al/ZnTiO 3 /FTO structure exhibited excellent performances with endurance cycles of 10 3 and a retention property up to 10 4 s. Besides, Blagoev et al fabricated LSMO and LSMO/YBCO polycrystalline films on an r-cut Al 2 O 3 substrate by magnetron sputtering, 78 which could exhibit ferromagnetic behavior at room temperature.…”