Nonlinear Analysis of Nonresonant THz Response of MOSFET and Implementation of a High-Responsivity Cross-Coupled THz Detector

Khan, Muhammad Ibrahim Wasiq; Kim, Suna; Park, Dae‐Woong; Kim, Hyoung-Jun; Han, Sehee; Lee, Sang‐Gug

doi:10.1109/tthz.2017.2778499

Cited by 31 publications

(14 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this section, the rectified output current of the GFET THz detector will be modeled using the nonlinear properties of the GFET as expressed by a second-order Taylor expansion of the dc I-V characteristics of the GFET [27], i. e.,…”

Section: Electrical Nonlinear Modelmentioning

confidence: 99%

“…In addition, it is necessary to vary frequency, bias, temperature, and other conditions to distinguish between different types of detection mechanisms. For example, the bias dependence of the detector responsivity was analysed by Khan et al [27] at 500 GHz and by Sun et al [28] at 900 GHz for This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/ antenna-coupled CMOS detectors and GaN HEMT detectors, respectively.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

Yang

Vorobiev

Jeppson

et al. 2020

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

Direct power detectors based on field-effect transistors are becoming widely used for terahertz applications. However, accurate characterization at terahertz frequencies of such detectors is a challenging task. The high-frequency response is dominated by parasitic coupling and loss associated with contacts and overall layout of the component. Moreover, the performance of such detectors is complicated to predict since many different physical models are used to explain the high sensitivity at terahertz frequencies. This makes it hard to draw important conclusions about the underlying device physics for these detectors. For the first time, we demonstrate accurate and comprehensive characterization of graphene fieldeffect transistors from 1 GHz to 1.1 THz, simultaneously accessing the bias dependence, the scattering parameters, and the detector voltage responsivity. Within a frequency range of more than 1 THz, and over a wide bias range, we have shown that the voltage responsivity can be accurately described using a combination of a small-signal equivalent circuit model, and the second-order series expansion terms of the nonlinear dc I-V characteristics. Without bias, the measured low-frequency responsivity was 0.3 kV/W with the input signal applied to the gate, and 2 kV/W with the input signal applied to the drain. The corresponding cutoff frequencies for the two cases were 140 and 50 GHz, respectively. With a 300-GHz signal applied to the gate, a voltage responsivity of 1.8 kV/W was achieved at a drain-source current of 0.2 mA. The minimum noise equivalent power was below 30 pW/ √ Hz in cold mode. Our results show that detection of terahertz signals in graphene field-effect transistors can be described over a wide frequency range by the nonlinear carrier transport characteristics obtained at static electrical fields. This finding is important for explaining the mechanism of detection and for further development of terahertz detectors.

show abstract

Section: Electrical Nonlinear Modelmentioning

confidence: 99%

mentioning

confidence: 99%

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

Yang

Vorobiev

Jeppson

et al. 2020

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The rectification process or the so‐called self‐mixing takes place only in a small part of the channel [7]. As demonstrated in [8], a drain‐driven detector shows a relatively higher response among cooled (drain zero‐biased) detectors, which is more significant in a differential antenna‐coupled detector of Fig. 1 b due to an improved DC current.…”

Section: Design Parameters Of Direct Detectorsmentioning

confidence: 99%

Short‐channel MOSFET for terahertz wave detection fabricated in 55 nm silicon CMOS process technology

2019

View full text Add to dashboard Cite

Terahertz (THz) detectors imaging is an attractive technology that has been widely adopted in various imaging applications, but the low response has always been a critical problem for THz detectors. Here, the authors present some antenna‐coupled 2.58 THz detectors fabricated using 55 nm CMOS process technology for the terahertz wave detection well beyond the device cut‐off frequency, each detector consists of a patch antenna and one or few short‐channel metal–oxide–semiconductor field‐effect‐transistors (MOSFETs). The authors demonstrated two drain‐driven detectors different from the commonly used configurations, and proved that this structure can effectively improve the response to the quantum cascade laser. The output signal is extracted with a lock‐in amplifier under room temperature.

show abstract

“…For resistive self-mixing FETs, a close antenna-detector co-design, taking into account antenna efficiency and antenna-detector impedance matching, is realized in [26]- [28] by extending the Dyakonov and Shur plasma-wave theory [29] for an accurate system responsivity and NEP prediction. Alternatively, FETs can also be optimized using non-physical Taylor expansions or Volterra series [25], [30], [31]. The NEP of the SBDs, presented in [18], [19], and diode connected NMOS transistors in [20], were modeled using an equivalent lumped element circuit of a SBD with a high-frequency device analysis approach that was introduced in [32].…”

mentioning

confidence: 99%

Wideband Modeling of CMOS Schottky Barrier Diode Detectors for THz Radiometry

Berkel

Malotaux

Martino

et al. 2021

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

A complete system modeling and characterization of a wideband differential THz direct detector, integrated in a commercial CMOS technology, is presented. The detector consists of a recently developed double leaky slot lens antenna that operates from 200 GHz to 600 GHz in combination with a differential Schottky Barrier Diode (SBD) direct detection circuit. The proposed methodology, starting from low frequency measurements on a standalone SBD, is able to adequately model the spectral radiometric performance. The system Noise Equivalent Power (NEP) is characterized from 325 GHz to 500 GHz in excellent agreement with the proposed system model. The measured NEP, 20 pW/ √ Hz minimum and 90 pW/ √ Hz frequency averaged, is compromised w.r.t. the average NEP of 2.7 pW/ √ Hz that was initially predicted by simulations using the process design kit (PDK) model, since the available SBDs are operating beyond their cut-off frequency. The diodes and models provided by the PDK proved to be inaccurate in predicting circuit behavior at these high frequencies. By using the proposed analysis and modeling approaches, an accurate wideband antenna-detector co-design could be applied for future passive THz imaging applications based on CMOS technologies.

show abstract

Nonlinear Analysis of Nonresonant THz Response of MOSFET and Implementation of a High-Responsivity Cross-Coupled THz Detector

Cited by 31 publications

References 37 publications

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

Short‐channel MOSFET for terahertz wave detection fabricated in 55 nm silicon CMOS process technology

Wideband Modeling of CMOS Schottky Barrier Diode Detectors for THz Radiometry

Contact Info

Product

Resources

About