Short‐channel MOSFET for terahertz wave detection fabricated in 55 nm silicon CMOS process technology

Abstract

Terahertz (THz) detectors imaging is an attractive technology that has been widely adopted in various imaging applications, but the low response has always been a critical problem for THz detectors. Here, the authors present some antenna‐coupled 2.58 THz detectors fabricated using 55 nm CMOS process technology for the terahertz wave detection well beyond the device cut‐off frequency, each detector consists of a patch antenna and one or few short‐channel metal–oxide–semiconductor field‐effect‐transistors (MOSFETs). The authors demonstrated two drain‐driven detectors different from the commonly used configurations, and proved that this structure can effectively improve the response to the quantum cascade laser. The output signal is extracted with a lock‐in amplifier under room temperature.