Modeling and simulation of short channel length effect in open drain MOSFET THz detectors

Abstract

THz radiation detection using FET devices has attracted increasing attention lately. In this paper, we further study a simulated model of FET rectification detection in short channel length. To achieve this, both physics-based analytic model and a detailed TCAD simulation were contacted and compared. The analytical model provided detailed dependence of the response on the channel length below the extension length of the radiation. However, the simulation results were validated by comparison with the experimental data to confirm the validity of the theoretical model. These results present a new model of rectification for short channel lengths and its dependence on the extinction of AC signal through the channel.

Review on Physics and Modelling of THz Radiation Detection Using Field-effect Transistors

“…Si MOSFET TeraFETs were also simulated using TCAD simulators [11] Therefore, a suitable device design is required to maximize the PV response by optimizing the device's variables (such as its gate length). Ritesh Jain et al [60] used time domain TCAD simulations to extract the effects of device parasitics (such as source resistance, drain resistance, and drain-to-body and channel-to-body capacitances) on the operation of CMOS FET THz detectors.…”

“…The principle behind THz radiation detection in a FET device beyond its cut-off frequency is based on the nonlinear properties of the transistor [7,8]. Different types of FETs, such as Schottky diodes [9], Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) [10][11][12][13], Heterostructure Bipolar Transistors (HBTs) [14,15], and High Electron Mobility Transistors (HEMTs) (e.g. GaAs-based commercial HEMTs [16], nitride-based HEMTs [17,18], and gated double quantum well heterostructures [19]) were used to detect the THz radiation.…”