Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

Abstract

Direct power detectors based on field-effect transistors are becoming widely used for terahertz applications. However, accurate characterization at terahertz frequencies of such detectors is a challenging task. The high-frequency response is dominated by parasitic coupling and loss associated with contacts and overall layout of the component. Moreover, the performance of such detectors is complicated to predict since many different physical models are used to explain the high sensitivity at terahertz frequencies. This makes it hard to draw important conclusions about the underlying device physics for these detectors. For the first time, we demonstrate accurate and comprehensive characterization of graphene fieldeffect transistors from 1 GHz to 1.1 THz, simultaneously accessing the bias dependence, the scattering parameters, and the detector voltage responsivity. Within a frequency range of more than 1 THz, and over a wide bias range, we have shown that the voltage responsivity can be accurately described using a combination of a small-signal equivalent circuit model, and the second-order series expansion terms of the nonlinear dc I-V characteristics. Without bias, the measured low-frequency responsivity was 0.3 kV/W with the input signal applied to the gate, and 2 kV/W with the input signal applied to the drain. The corresponding cutoff frequencies for the two cases were 140 and 50 GHz, respectively. With a 300-GHz signal applied to the gate, a voltage responsivity of 1.8 kV/W was achieved at a drain-source current of 0.2 mA. The minimum noise equivalent power was below 30 pW/ √ Hz in cold mode. Our results show that detection of terahertz signals in graphene field-effect transistors can be described over a wide frequency range by the nonlinear carrier transport characteristics obtained at static electrical fields. This finding is important for explaining the mechanism of detection and for further development of terahertz detectors.

Terahertz Detection with Graphene FETs: Photothermoelectric and Resistive Self-Mixing Contributions to the Detector Response

“…For the frequencies of our measurements ( f THz up to 1.2 THz), the second condition is also fulfilled, since τ p ≈ 60 fs . Note that the performance of the G-TeraFET due to the rectification by resistive self-mixing can also be modeled by means of Volterra series approaches. , …”

“…83 Note that the performance of the G-TeraFET due to the rectification by resistive self-mixing can also be modeled by means of Volterra series approaches. 84,85 In case of the SAC design, no net RSM signal is obtained as long as the two top gates are equally biased (relative to U Dirac ). If this is not the case, one can employ eq 5 for each side of the central ungated region and calculate the net U RSM value.…”

A Linear-Array of 300-GHz Antenna Integrated GFET Detectors on a Flexible Substrate

“…Each pixel element of the array is formed as a two-terminal detector, where the incoming RF-signal is coupled to both the gate and the drain terminals. All detectors in the array are connected to a common source and designed using a quasi-static model based on the nonlinear dc-characteristics [15]. Based on previous experience the GFET gate length of 1.4 µm and a gate width of 6.8 µm was chosen for obtaining a small-signal device impedance of 70 Ω at 300 GHz.…”